Amir Gavoshani

Achieving a High Figure of Merit in LDMOSFETs with Double P-window in Silicon Dioxide

A. A. Orouji, Amir Gavoshani, 2022, Silicon.

A New Technique to Improve Breakdown Voltage of SOI LDMOSs: Multiple Diode Wells

A. Orouji, Mostafa Dehghan, Amir Gavoshani, 2021, Silicon.

A novel deep gate power MOSFET in partial SOI technology for achieving high breakdown voltage and low lattice temperature

A. Orouji, Amir Gavoshani, 2021, Journal of Computational Electronics.

A Novel Deep Gate LDMOS Structure Using Double P-Trench to Improve the Breakdown Voltage and the On-State Resistance

A. Orouji, Abdollah Abbasi, Amir Gavoshani, 2021, Silicon.