Shze-Jer Hu

A new oxide breakdown degradation phenomenon in CMOS transistors

T. Yeoh, Shze-Jer Hu, 1995, Proceedings of 5th International Symposium on the Physical and Failure Analysis of Integrated Circuits.

Gate oxide breakdown model in MOS transistors

Teong-San Yeoh, Shze-Jer Hu, N. R. Kamat, 1995, Proceedings of 1995 IEEE International Reliability Physics Symposium.

Influence of MOS transistor gate oxide breakdown on circuit performance

Teong-San Yeoh, Shze-Jer Hu, T. Yeoh, 1998, ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187).

Effect of modified calm conditions on nuclear dispersion estimates.

H. Katagiri, Shze-Jer Hu, Hideo Kobayash, 1995, Health physics.