F. Fujie

发表

Nondestructive visualization of threading dislocations in GaN by micro raman mapping

M. Shimizu, M. Tagawa, S. Harada, 2019, Japanese Journal of Applied Physics.

Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC

M. Dudley, M. Tagawa, S. Harada, 2021 .

Surface relaxation and photoelectric absorption effects on synchrotron X-ray topographic images of dislocations lying on the basal plane in off-axis 4H-SiC crystals

M. Dudley, S. Harada, T. Ujihara, 2021 .

Synchrotron X-Ray Topographic Image Contrast Variation of BPDs Located at Different Depths Below the Crystal Surface in 4H-SiC

M. Dudley, M. Tagawa, S. Harada, 2021 .

Influence of surface relaxation on the contrast of threading edge dislocations in synchrotron X-ray topographs under the condition of g · b = 0 and g · b × l = 0

M. Dudley, B. Raghothamachar, Hongyu Peng, 2021 .

Temperature Dependence of Double Shockley Stacking Fault Behavior in Nitrogen-Doped 4h-Sic Studied by In-Situ Synchrotron X-Ray Topography

M. Tagawa, Tomohisa Kato, S. Harada, 2020, Acta Materialia.

Direct observation of stacking fault shrinkage in 4H-SiC at high temperatures by in-situ X-ray topography using monochromatic synchrotron radiation

M. Tagawa, S. Harada, T. Ujihara, 2018, Applied Physics Letters.

Detection of edge component of threading dislocations in GaN by Raman spectroscopy

M. Shimizu, M. Tagawa, S. Harada, 2018 .

Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping

M. Shimizu, M. Tagawa, S. Harada, 2018, Applied Physics Express.

Analysis of dislocation line tilt in GaN single crystal by Raman spectroscopy

M. Shimizu, M. Tagawa, S. Harada, 2020, Japanese Journal of Applied Physics.

Suppression of Polytype Transformation with Extremely Low-Dislocation-Density 4H-SiC Crystal in Two-Step Solution Method

M. Tagawa, S. Harada, T. Ujihara, 2018, Materials Science Forum.

Immobilization of Partial Dislocations Bounding Double Shockley Stacking Faults in 4h-Sic Observed by in Situ Synchrotron X-Ray Topography

M. Dudley, M. Tagawa, Tomohisa Kato, 2021, SSRN Electronic Journal.