D. K. Nichols

发表

H. R. Schwartz, Allan H. Johnston, D. K. Nichols, 1997 .

Single-Event-Upset Studies: A Compilation

L. S. Smith, D. K. Nichols, W. E. Price, 1986 .

Device SEE susceptibility from heavy ions (1995-1996)

H. R. Schwartz, T. F. Miyahira, G. M. Swift, 1997, 1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference.

Overview Of Device See Susceptibility From Heavy Ions

H. R. Schwartz, G. M. Swift, L. S. Smith, 1993, 1993 IEEE Radiation Effects Data Workshop.

TRENDS IN DEVICE SEE SUSCEPTIBILITY FROM HEAVY IONS

H. R. Schwartz, G. M. Swift, D. K. Nichols, 1995, Proceedings of 1995 IEEE Nuclear and Space Radiation Effects Conference (NSREC'95).

An observation of proton-induced latchup (in CMOS microprocessor)

R. L. Pease, H. R. Schwartz, D. K. Nichols, 1992 .

Recent Trends in Parts SEU Susceptibility from Heavy Ions

R. Koga, W. A. Kolasinski, L. S. Smith, 1987, IEEE Transactions on Nuclear Science.

Heavy ion and proton induced single event transients in comparators

H. R. Schwartz, D. K. Nichols, T. Miyahira, 1996 .

Latchup in CMOS Integrated Circuits

D. K. Nichols, K. A. Soliman, 1985 .

Single event gate rupture in commercial power MOSFETs

D. K. Nichols, K. P. McCarty, J. R. Coss, 1993, RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3).

A Prediction Model for Bipolar RAMs in a High Energy Ion/Proton Environment

D. K. Nichols, W. E. Price, D. K. Myers, 1981, IEEE Transactions on Nuclear Science.

A Study of Single Event Upsets in Static RAMS's

D. K. Nichols, W. E. Price, K. A. Soliman, 1980, IEEE Transactions on Nuclear Science.

The Dependence of Single Event Upset on Proton Energy (15-590 MeV)

J. L. Andrews, D. K. Nichols, W. E. Price, 1982, IEEE Transactions on Nuclear Science.

Heavy ion induced Single Event Phenomena (SEP) data for semiconductor devices from engineering testing

D. K. Nichols, J. R. Coss, W. E. Price, 1988 .

Temperature and Epi Thickness Dependence of the Heavy Ion Induced Latchup Threshold for a CMOS/EPI 16K Static RAM

D. K. Nichols, J. R. Coss, W. E. Price, 1987, IEEE Transactions on Nuclear Science.

Update on parts SEE suspectibility from heavy ions. [Single Event Effects

H. R. Schwartz, G. A. Soli, D. K. Nichols, 1991 .

A guideline for heavy ion radiation testing for Single Event Upset (SEU)

D. K. Nichols, W. E. Price, C. J. Malone, 1984 .

Investigation for Single-Event Upset in MSI Devices

D. K. Nichols, W. E. Price, J. P. Woods, 1981, IEEE Transactions on Nuclear Science.

Discovery of heavy-ion induced latchup in CMOS/epi devices

D. K. Nichols, W. E. Price, J. Duffey, 1986 .

Latchup in CMOS Devices from Heavy Ions

D. K. Nichols, K. Soliman, D. Nichols, 1983, IEEE Transactions on Nuclear Science.

SEU of Complementary GaAs Static Rams Due to Heavy Ions

R. Zuleeg, D. K. Nichols, J. K. Notthoff, 1984, IEEE Transactions on Nuclear Science.

Single Event Upset Sensitivity of Low Power Schottky Devices

D. K. Nichols, W. E. Price, P. R. Measel, 1982, IEEE Transactions on Nuclear Science.

A Comparison of Radiation Damage in Transistors from Cobalt-60 Gamma Rays and 2.2 MeV Electrons

D. K. Nichols, W. E. Price, M. K. Gauthier, 1982, IEEE Transactions on Nuclear Science.

Theory of Transient Electrical Effects in Irradiated Insulators

D. K. Nichols, V. A. J. van Lint, 1966 .

Computerized Model for Response of Transistors to a Pulse of Ionizing Radiation

J. H. Alexander, D. K. Nichols, V. A. J. van Lint, 1967 .

Total Dose Effects of Ionizing Radiation on MOS Structures at 90°K

R. L. Nielsen, D. K. Nichols, D. Nichols, 1973 .