X. Feng

发表

Carbonaceous materials containing silicon as anodes for lithium-ion cells

J. Dahn, J. Xue, Y. Gao, 1995 .

Free ion yields in liquids exposed to synchrotron x-rays

T. Sham, B. Yang, R. Holroyd, 1992 .

Si K-edge and Ge K-edge X-ray absorption spectroscopy of the SiGe interface in [( Si) m ( Ge) n ] p atomic layer superlattices

J. M. Chen, T. Tyliszczak, Z. Lu, 1993 .

Si K-edge X-ray absorption fine structure studies of porous silicon

T. Sham, D. Jiang, D. Houghton, 1992 .

High-resolution Si K- and L2,3-edge XANES of α-quartz and stishovite

X. Feng, M. Fleet, G. Bancroft, 1993 .

Sulfur K- and L-edge XANES and electronic structure of zinc, cadmium and mercury monosulfides: a comparative study

X. Feng, M. Fleet, G. Bancroft, 1994 .

Sulfur K- and L-edge X-ray absorption spectroscopy of sphalerite, chalcopyrite and stannite

M. Fleet, G. Bancroft, M. Kasrai, 1994 .

S K- and L-edge XANES and electronic structure of some copper sulfide minerals

M. Fleet, G. Bancroft, M. Kasrai, 1994 .

Molecular dynamics simulations of liquids and glasses in the system NaAlSiO4-SiO2: Methodology and melt structures

M. Fleet, G. Bancroft, Dien Li, 1995 .

Silicon K-edge XANES spectra of silicate minerals

M. Fleet, G. Bancroft, Dien Li, 1995 .

X-ray absorption spectroscopy of silicon dioxide (SiO2) polymorphs : the structural characterization of opal

Richard A. Secco, K. H. Tan, Masoud Kasrai, 1994 .

Origin of luminescence from porous silicon deduced by synchrotron-light-induced optical luminescence

S. P. Frigo, R. Rosenberg, T. Sham, 1993, Nature.

Polarization dependence of the Si K-edge X-ray absorption spectra of Si-Ge atomic layer superlattices

T. Tyliszczak, A. Hitchcock, J. Baribeau, 1994 .

Critical Conditions for Binding of Dimethyldodecylamine Oxide Micelles to Polyanions of Variable Charge Density

P. Bahadur, P. Dubin, H. Zhang, 2001 .

Large-scale passive laser gyroscope for earth rotation sensing

Jun Luo, K. Schreiber, J. Luo, 2019, Optics Letters.

DIRECT ION-BEAM DEPOSITION OF CARBON-FILMS ON SILICON IN THE ION ENERGY-RANGE OF 15-500 EV

Shui-Tong Lee, I. Bello, W. Lau, 1991 .

Heteroepitaxy of carbon on copper by high‐temperature ion implantation

I. Bello, W. Lau, S. Lee, 1991 .

XANES of organosilicon clusters at the Si K- and L-edge

T. Sham, D. Jiang, K. Tan, 1995 .

Sulphur speciation in bitumens and asphaltenes by X-ray absorption fine structure spectroscopy

G. Bancroft, M. Kasrai, K. Tan, 1994 .

High-resolution Si and P K- and L-edge XANES spectra of crystalline SiP 2 O 7 and amorphous SiO 2 -P 2 O 5

M. Fleet, G. Bancroft, K. Tan, 1994 .

Polarized X-ray absorption spectra and electronic structure of molybdenite (2H-MoS2)

X. Feng, M. Fleet, G. Bancroft, 1995 .

Structure of S-passivated InP(100)-(1×1) surface

Z. Lu, B. Yang, M. J. Graham, 1992 .

Structure of Sulphur-Passivated InP(100)-(1×1) Surface

E. Sacher, Z. Lu, A. Yelon, 1992 .

Structure of S on passivated GaAs (100)

Z. Lu, X. Feng, B. Yang, 1993 .

X‐ray absorption near edge structures of sulfur on gas‐phase polysulfide treated InP surfaces and at SiNx/InP interfaces

S. Ingrey, W. Lau, L. Huang, 1994 .

Observations on the surface and bulk luminescence of porous silicon

S. P. Frigo, R. Rosenberg, T. Sham, 1993 .

Construction, characterization and applications of a compact mass-resolved low-energy ion beam system

I. Bello, W. Lau, R. Lawson, 1991 .

Chemical Bonding in Restacked Single-Layer MoS2 by X-ray Absorption Spectroscopy

D. Bélanger, D. Guay, W. Divigalpitiya, 1994 .