S. Mori

Application Of Electron-beam Direct-writing Technology To High-density 0.8μm CMOS ASICs And WSI Neurocomputers

Makoto Kato, Takahiko Takahashi, Hajime Hayakawa, 1992, 1992 Proceedings of the IEEE Custom Integrated Circuits Conference.

Effect of Coils on Natural Frequencies of Stator Cores in Small Induction Motors

S. Mori, S. Noda, F. Ishibashi, 1987, IEEE Transactions on Energy Conversion.

A new MOSFETs degradation induced by gate current in off-state condition

Y. Kaneko, K. Narita, H. Araki, 1990, Digest of Technical Papers.1990 Symposium on VLSI Technology.

Reliable CVD Inter-Poly Dielectrics for Advanced E&EEPROM

S. Mori, Y. Mikata, H. Nozawa, 1985, 1985 Symposium on VLSI Technology. Digest of Technical Papers.

Novel process and device technologies for submicron 4Mb CMOS EPROMs

N. Matsukawa, S. Mori, K. Yoshikawa, 1987, 1987 International Electron Devices Meeting.

New interconnect plasma induced damage analyzed by flash memory cell array

T. Uemura, S. Mori, K. Isobe, 1996, International Electron Devices Meeting. Technical Digest.

Reliability Aspects of 100A Inter-Poly Dielectrics for High Density VLSI's

S. Mori, H. Nozawa, M. Sato, 1986, 1986 Symposium on VLSI Technology. Digest of Technical Papers.

A novel self-aligned shallow trench isolation cell for 90 nm 4 Gbit NAND flash EEPROMs

M. Higashitani, G. Hemink, S. Mori, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

A 62ns 16Mb CMOS EPROM With Address Transition Detection Technique

Y. Iyama, S. Mori, Y. Ohshima, 1991, 1991 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

ONO Interpoly Dielectric Scaling Limit For Non-volatile Memory Devices

S. Mori, E. Sakagami, K. Yoshikawa, 1993, Symposium 1993 on VLSI Technology.