Hervé Blanck

发表

Power HBT reliability for space applications

Ph. Auxemery, G. Pataut, Hervé Blanck, 2003 .

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs

Gaudenzio Meneghesso, Hervé Blanck, Enrico Zanoni, 2018, Microelectron. Reliab..

Qualification of 50 V GaN on SiC technology for RF power amplifiers

Hervé Blanck, Benoit Lambert, Maximilian Dammann, 2013, Microelectron. Reliab..

Reliability studies on GaN HEMTs with sputtered Iridium gate module

Hervé Blanck, Joachim Würfl, Richard Lossy, 2012, Microelectron. Reliab..

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices

Hervé Blanck, Jan Kuzmik, Frank Altmann, 2017, Microelectron. Reliab..

Determination of the thermal resistance and current exponent of heterojunction bipolar transistors for reliability evaluation

Olivier Vendier, Hervé Blanck, R. Petersen, 2001, Microelectron. Reliab..

Industrial GaN FET technology

S. Heckmann, Marc Camiade, Hervé Blanck, 2010 .

Improved thermal management for GaN power electronics: Silver diamond composite packages

Olivier Vendier, Hervé Blanck, Mustapha Faqir, 2012, Microelectron. Reliab..

Reliability of high voltage/high power L/S-band Hbt technology

D. Floriot, Hervé Blanck, Benoit Lambert, 2010, Microelectron. Reliab..

Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification

D. Floriot, Hervé Blanck, Benoit Lambert, 2012, Microelectron. Reliab..

Industrial GaInP/GaAs high Power HBT Process for S-Band and L-Band Applications

G. Pataut, Hervé Blanck, Didier Floriot, 2007 .

Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications

Gaudenzio Meneghesso, Hervé Blanck, Benoit Lambert, 2014, Microelectron. Reliab..

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

Hervé Blanck, Paul J. Tasker, Jonathan Lees, 2015, Microelectron. Reliab..

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

D. Floriot, Hervé Blanck, Nathalie Labat, 2013, Microelectron. Reliab..

GaAs Industry in Europe - Technologies, Trends and New Developments

Hervé Blanck, Wolfgang Bösch, Helmut Jung, 2008, IEICE Trans. Electron..

Industrial GaInP/GaAs Power HBT MMIC Process

Hervé Blanck, W. Doser, D. Pons, 2000 .

Proton induced trapping effect on space compatible GaN HEMTs

Gaudenzio Meneghesso, Hervé Blanck, Benoit Lambert, 2014, Microelectron. Reliab..

HBT technology and reliability for satellite applications, withinthe relatively new APOS project

Olivier Vendier, Hervé Blanck, W. De Ceuninck, 1999 .

Finite Element Modelling of Flip Chip Gold-Gold Thermocompression Bonding

Olivier Vendier, Hervé Blanck, Didier Floriot, 2003 .

Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

Hervé Blanck, Niklas Rorsman, N. Rorsman, 2011 .

GaN Technologies Applications , Status and Trends

Marc Camiade, Hervé Blanck, Didier Floriot, 2009 .

Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface

Hervé Blanck, K. Riepe, R. Behtash, 2009 .

Novel packaging solutions for GaN power electronics: Silver-diamond composite packages

Olivier Vendier, Hervé Blanck, Martin Kuball, 2010 .

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Hervé Blanck, Jonathan Lees, Paul J. Tasker, 2015 .

Highly Linear Ka-Band 0 . 15 μ m GaAs Power pHEMT Process for Use in Low-Cost Molded QFN Plastic Package

Hervé Blanck, Philippe Auxemery, Didier Floriot, 2014 .