R. Aleksiejūnas

Deeper insight into non-equilibrium carrier dynamics in InP:Fe: experimental and modeling

Arūnas Kadys, R. Aleksiejūnas, Kęstutis Jarašiūnas, 2007, International Conference on Advanced Optical Materials and Devices.

Mapping of differently doped InP wafers by nanosecond and picosecond four-wave mixing techniques

V. Gudelis, Arūnas Kadys, R. Aleksiejūnas, 2007, International Conference on Advanced Optical Materials and Devices.

Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques

Hadis Morkoç, Ümit Özgür, Serdal Okur, 2012, OPTO.

All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

Michael Heuken, Pierre Gibart, Bernard Beaumont, 2007 .

Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers

Remis Gaska, Gintautas Tamulaitis, R. Aleksiejūnas, 2005 .

Diffusion-limited nonradiative recombination at extended defects in hydride vapor phase epitaxy GaN layers

R. Aleksiejūnas, Kęstutis Jarašiūnas, Alexander Usikov, 2011 .

Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers

R. Aleksiejūnas, Kęstutis Jarašiūnas, Shiro Sakai, 2003 .

Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique

Michael S. Shur, V. Gudelis, Remis Gaska, 2003 .