A. Crespo

发表

Ionophore-Based Optical

Eric Bakker, A. Crespo, E. Bakker, 2014 .

High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC

A. Crespo, M.A. Khan, J. Yang, 2003, IEEE Electron Device Letters.

RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz

A. Crespo, H. G. Henry, D. Langley, 2007, IEEE Electron Device Letters.

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

A. Crespo, D. Langley, G. Jessen, 2007, IEEE Transactions on Electron Devices.

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

H. Morkoc, A. Crespo, T. Paskova, 2012, IEEE Electron Device Letters.

Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

V. Miller, A. Crespo, G. Jessen, 2010, IEEE Electron Device Letters.

Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates

H. Morkoc, A. Crespo, M. Tapajna, 2012, IEEE Electron Device Letters.

High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

V. Miller, A. Crespo, S. Guo, 2010, IEEE Electron Device Letters.

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Hadis Morkoç, Xiang Li, Ümit Özgür, 2013 .

Effective Suppression of IV Knee Walk-Out in AlGaN/GaN HEMTs for Pulsed-IV Pulsed-RF With a Large Signal Network Analyzer

P. Roblin, Seok Joo Doo, A. Crespo, 2006, IEEE Microwave and Wireless Components Letters.