J. Pedini

Polycrystalline silicon PhC cavities for CMOS on-chip integration

L. O’Faolain, A. Blake, G. Devarapu, 2022, Scientific Reports.

Nitride stress inversion using plasma immersion ion implantation processes

F. Milési, M. Coig, L. Lachal, 2022, MRS Advances.

Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (−2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations

W. Schwarzenbach, O. Bonnin, J. Hartmann, 2014 .

Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 “high k” and 2 metal deposition techniques

X. Garros, Laurent Vandroux, Pascal Besson, 2007 .

A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration

C. Fenouillet-Béranger, F. Andrieu, X. Garros, 2021, IEEE Transactions on Electron Devices.