H. Chonan

Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates

M. Shimizu, H. Yamada, H. Yamada, 2018 .

Comparison of Electrical Properties of Ni/n‐GaN Schottky Diodes on c‐Plane and m‐Plane GaN Substrates

M. Shimizu, H. Yamada, Tokio Takahashi, 2018 .

Impact of substrate off-angle on the m-plane GaN Schottky diodes

M. Shimizu, H. Yamada, Tokio Takahashi, 2017 .

Electrical properties of Ni/n-GaN Schottky diodes on freestanding m-plane GaN substrates

Tokio Takahashi, Hisashi Yamada, M. Shimizu, 2017 .

Reduction in residual impurities in semi-polar 303¯1¯ and 202¯1¯ GaN grown by metalorganic vapor phase epitaxy

M. Shimizu, Toshikazu Yamada, Hisashi Yamada, 2019, Journal of Crystal Growth.

Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel

M. Shimizu, Toshikazu Yamada, Tokio Takahashi, 2021, Applied Physics Letters.