N. Lim

Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer

S. Denbaars, S. Nakamura, M. Gordon, 2022, Crystals.

Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and Al0.3Ga0.7As metal-insulator-semiconductor diodes

W. S. Lau, T. Chong, L. Tan, 1999 .

Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates

S. Nakamura, M. Gordon, Philip Chan, 2023, Advanced Photonics Research.

Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature

S. Denbaars, S. Nakamura, M. Gordon, 2021, Applied Physics Express.

InGaN Based C-Plane Blue Laser Diodes on Strain Relaxed Template with Reduced Absorption Loss

S. Denbaars, S. Nakamura, Haojun Zhang, 2022, Crystals.

Demonstration of C-Plane InGaN-Based Blue Laser Diodes Grown on a Strain-Relaxed Template

S. Denbaars, S. Nakamura, M. Gordon, 2022, Crystals.

Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer

S. Denbaars, S. Nakamura, Haojun Zhang, 2022, Crystals.