Quentin Rafhay

发表

Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network

Gerard Ghibaudo, Elisa Vianello, Philippe Candelier, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects

Nicolas Degors, Clement Tavernier, Denis Rideau, 2011 .

New Y-function based MOSFET parameter extraction method from weak to strong inversion range

Quentin Rafhay, Antoine Cros, Jean-Baptiste Henry, 2016 .

Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology

Frederic Boeuf, J. Lacord, Quentin Rafhay, 2015 .

Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime

Frédéric Boeuf, Gérard Ghibaudo, Gaspard Hiblot, 2014, 2014 44th European Solid State Device Research Conference (ESSDERC).

New access resistance extraction methodology for 14nm FD-SOI technology

Gerard Ghibaudo, Jean-Baptiste Henry, Quentin Rafhay, 2016, 2016 International Conference on Microelectronic Test Structures (ICMTS).

Precise EOT regrowth extraction enabling performance analysis of low temperature extension first devices

Maud Vinet, Mikaël Casse, Laurent Brunet, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR

Frédéric Boeuf, Gérard Ghibaudo, Gaspard Hiblot, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

On the impact of OxRAM-based synapses variability on convolutional neural networks performance

Elisa Vianello, Olivier Bichler, Christian Gamrat, 2015, Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH´15).

Characterization and modelling of gate current injection in embedded non-volatile flash memory

Yusuf Leblebici, Alban Zaka, Pierpaolo Palestri, 2011, 2011 IEEE ICMTS International Conference on Microelectronic Test Structures.

New parameter extraction method based on split C-V measurements in FDSOI MOSFETs

Frederic Boeuf, Francis Balestra, Quentin Rafhay, 2013 .

Resistive memory variability: A simplified trap-assisted tunneling model

B. DeSalvo, Elisa Vianello, Philippe Candelier, 2016 .

Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs

Gerard Ghibaudo, Raphael Clerc, Quentin Rafhay, 2008 .

Impact of short-channel effects on velocity overshoot in MOSFET

Frédéric Boeuf, Gérard Ghibaudo, Gaspard Hiblot, 2015, 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS).

On the accuracy of current TCAD hot carrier injection models in nanoscale devices

Pierpaolo Palestri, Matteo Iellina, Clement Tavernier, 2010 .

CMOS roadmap analysis from the perspective of III-V technology using MASTAR

Frederic Boeuf, Gerard Ghibaudo, Gaspard Hiblot, 2015, 2015 Silicon Nanoelectronics Workshop (SNW).

Revisited approach for the characterization of Gate Induced Drain Leakage

Maud Vinet, Gerard Ghibaudo, Perrine Batude, 2011 .

Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods

Russell Duane, Quentin Rafhay, M. Florian Beug, 2007 .

Impact of access resistance on New-Y function methodology for MOSFET parameter extraction in advanced FD-SOI technology

Gérard Ghibaudo, Jean-Baptiste Henry, Quentin Rafhay, 2017, 2017 International Conference of Microelectronic Test Structures (ICMTS).

Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment

Gilles Reimbold, Gerard Ghibaudo, Elisa Vianello, 2015, 2015 IEEE International Integrated Reliability Workshop (IIRW).

New parameter extraction method based on split C-V for FDSOI MOSFETs

Frédéric Boeuf, Gérard Ghibaudo, Claire Fenouillet-Béranger, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Modelling of nano nMOSFETs with alternative channel materials in the fully and quasi ballistic regimes

Quentin Rafhay, Q. Rafhay, 2008 .

Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices

Frederic Boeuf, Gerard Ghibaudo, Gaspard Hiblot, 2015, IEEE Transactions on Electron Devices.

Dark Space, Quantum Capacitance and Inversion Capacitance in Si, Ge, GaAs and In0.53Ga0.47As nMOS Capacitors

G. Ghibaudo, G. Pananakakis, Raphael Clerc, 2010 .

Investigation of Back-Bias Capacitance Coupling Coefficient Measurement Methodology for Floating-Gate Nonvolatile Memory Cells

Russell Duane, Quentin Rafhay, Michiel J van Duuren, 2010, IEEE Transactions on Electron Devices.

Refined Conformal Mapping Model for MOSFET Parasitic Capacitances Based on Elliptic Integrals

Frederic Boeuf, Gerard Ghibaudo, Gaspard Hiblot, 2015, IEEE Transactions on Electron Devices.

Revisited approach for the characterization of Gate Induced Drain Leakage

Maud Vinet, Gerard Ghibaudo, Perrine Batude, 2011, Ulis 2011 Ultimate Integration on Silicon.

Mobility and Backscattering in Germanium n-type Inversion Layers

Luca Selmi, Pierpaolo Palestri, David Esseni, 2007 .

Using a mixed ionic electronic conductor to build an analog memristive device with neuromorphic programming capabilities

Quentin Rafhay, Mónica Burriel, Xavier Mescot, 2020 .

Technology Oriented Analytical Models of MOSFETs in the Quasi Ballistic Regime

Luca Selmi, Gerard Ghibaudo, Pierpaolo Palestri, 2007 .