Simon Jeannot

Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network

Gerard Ghibaudo, Elisa Vianello, Philippe Candelier, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization

Elisa Vianello, S. Denorme, Philippe Candelier, 2015, 2015 45th European Solid State Device Research Conference (ESSDERC).

Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory

Jean Coignus, Fausto Piazza, Francis Balestra, 2017, Microelectron. Reliab..

Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells

Laurent Grenouillet, Elisa Vianello, E. Jalaguier, 2016, 2016 46th European Solid-State Device Research Conference (ESSDERC).

Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3

Claire Fenouillet-Beranger, Stephane Denorme, Elisa Vianello, 2016 .