C. Combescure

发表

Preparation and study of the electrical properties of n-type boron and SiB alloys with a high boron concentration☆

J. Robert, J. Dusseau, B. Armas, 1981 .

Fabrication and study of electrical properties of boron-silicon compounds with high boron concentration

J. Robert, B. Pistoulet, T. Lepetre, 1976 .

Morphological properties of chemical vapour deposited AlN films

Rafael Rodríguez-Clemente, B. Aspar, B. Aspar, 1993 .

Influence of the experimental conditions on the morphology of CVD AIN films

B. Aspar, A. Figueras, R. Rodríguez-Clemente, 1993 .

Chemical vapor deposition of NbB$sub 2$ and TaB$sub 2$ through heating by concentration of solar radiation

F. Trombe, B. Armas, C. Combescure, 1976 .

Low pressure chemical vapour deposition of AlN-Si3N4 codeposits

R. Berjoan, C. Dupuy, F. Henry, 1997 .

β-SiC deposition by hot-wall MOCVD using tetramethylsilane

F. Henry, A. Figueras, B. Armas, 1996 .

Transmission electron microscopy studies of AlN deposits

B. Aspar, B. Armas, Y. Kihn, 1994 .

A morphological and structural study of SiC layers obtained by LPCVD using tetramethylsilane

C. Dupuy, A. Figueras, R. Rodríguez-Clemente, 1991 .

Controlled nucleation and growth of thin hydroxyapatite layers on titanium implants by using induction heating technique.

R. Berjoan, J. Cubo, D. Muraviev, 2004, Langmuir : the ACS journal of surfaces and colloids.

Organometallic chemical vapour deposition in the Al-O-N system

B. Aspar, B. Armas, C. Combescure, 1991 .

Thermodynamic analysis of metalorganic chemical vapour deposition of SiC using tetramethylsilane as precursor. II. Influence of the minoritary tetramethylsilane pyrolysis byproducts in the preferred crystallization of SiC layers

A. Figueras, R. Rodríguez-Clemente, B. Armas, 1995 .

Growth and properties of CVD-SiC layers using tetramethylsilane

R. Berjoan, J. Santiso, A. Figueras, 1992 .

Transport phenomena in a cold wall vertical reactor for metalorganic vapor phase growth of β-SiC layers

H. Chehouani, A. Figueras, S. Benet, 1993 .

A study of the thermal decomposition of gaseous Si-B bromides under reduced pressure

M. Morales, B. Armas, G. Male, 1979 .

Influence of temperature and tetramethylsilane partial pressure on the β-SiC deposition by cold wall chemical vapor deposition

A. Figueras, R. Rodríguez-Clemente, B. Armas, 1992 .

A study of AlN-Si3N4 codeposits using the L.P.C.V.D. technique

R. Berjoan, F. Henry, B. Armas, 1993 .