Yoichiro Mitani

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method

S. Yamakawa, M. Imaizumi, H. Sumitani, 2014 .

Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress

S. Nakata, S. Yamakawa, Shigehisa Yamamoto, 2013 .

Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy

S. Yamakawa, M. Imaizumi, H. Sumitani, 2015 .

Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

S. Yamakawa, M. Imaizumi, H. Sumitani, 2014 .