H. Suzuki

发表

Detection of Shallow Dislocations on 4H-SiC Substrate by Etching Method

T. Bessho, Y. Sugawara, Y. Ishikawa, 2011 .

Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron Microscopy

S. Yamaguchi, T. Bessho, Y. Ikuhara, 2014 .

Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy

T. Bessho, Y. Ikuhara, Y. Sugawara, 2012 .

Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate

T. Bessho, Y. Sugawara, Y. Ishikawa, 2012 .

Real-time observation of the interface between SiC and a liquid alloy and its application to the dissolution behavior of SiC at 1573 K

S. Kawanishi, T. Yoshikawa, K. Kamei, 2013 .

A simultaneous observation of dislocations in 4H-SiC epilayer and n+-substrate by using electron beam induced current

Y. Sugawara, Y. Ishikawa, N. Shibata, 2011 .

Transmission Electron Microscopy Analysis of a Threading Dislocation with c+a Burgers Vector in 4H-SiC

Koichi Nishikawa, Yuichi Ikuhara, Yukari Ishikawa, 2012 .

Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation

T. Bessho, Y. Sugawara, Y. Ishikawa, 2012 .

Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na2O2 Etching

Y. Sugawara, Y. Ishikawa, N. Shibata, 2011 .

Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na2O2 Additive

Y. Sugawara, Y. Ishikawa, N. Shibata, 2011 .

Cross-sectional observation of stacking faults in 4H-SiC by KOH etching on nonpolar face, cathodoluminescence imaging, and transmission electron microscopy

T. Sekiguchi, T. Bessho, Y. Sugawara, 2014 .

Molten KOH Etching with Na2O2 Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

Y. Sugawara, Y. Ishikawa, N. Shibata, 2011 .

High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt

K. Kamei, T. Bessho, M. Kado, 2013 .

Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt

K. Kamei, T. Bessho, M. Kado, 2012 .

Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution

K. Kamei, T. Bessho, K. Moriguchi, 2012 .

Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering

T. Kimoto, T. Bessho, K. Danno, 2012 .

Growth of Large Diameter 4H-SiC by TSSG Technique

K. Kamei, T. Bessho, M. Kado, 2013 .

Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 °C

T. Bessho, Y. Sugawara, Y. Ishikawa, 2013 .

Dislocation Revelation from (0001) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature

T. Bessho, Y. Sugawara, Y. Ishikawa, 2012 .

Diffusion and Gettering of Transition Metals in 4H-SiC

T. Kimoto, T. Bessho, K. Danno, 2012 .