Yoon-Soo Chun

A new DRAM cell technology using merged process with storage node and memory cell contact for 4 Gb DRAM and beyond

Kinam Kim, Byung-Jun Park, Hong-Sik Jeong, 1998 .

Highly manufacturable 4Gb DRAM using 0.11μm DRAM technology

Yoon-Soo Chun, Soo-Ho Shin, Y. Hwang, 2000 .

A highly reliable 1T/1C ferroelectric memory

Yoon-Soo Chun, Kinam Kim, Dong-won Shin, 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

A 1T/1C Ferrodectric RAM Using A Double-level Metal Process For Highly Scalable Nonvolatile Memory

Joo-Han Park, Yoon-Soo Chun, Byung-Gil Jeon, 1997 .

A 0.13 /spl mu/m DRAM technology for giga bit density stand-alone and embedded DRAMs

Gwan-Hyeob Koh, Hyung Soo Uh, Dae-Won Ha, 2000, 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).