Jong Kang

A CELL MODEL FOR NON-VOLATILE RANDOM ACCESS MEMORY AND A SUBSEQUENT METHOD FOR INCREASING DENSITY

S. Hong, Seaung-Suk Lee, K. Park, 2007 .

Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM

Jae Yeon Lee, Yoocharn Jeon, Suock Chung, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Design considerations of HBM stacked DRAM and the memory architecture extension

Jaejin Lee, Kyung Whan Kim, Jun Hyun Chun, 2015, 2015 IEEE Custom Integrated Circuits Conference (CICC).

7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory

Hyunseok Lee, Hoon Choi, Massimo Rossini, 2016, 2016 IEEE International Solid-State Circuits Conference (ISSCC).