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Thermal response of MOCVD hafnium silicate

G. Bersuker, S. Stemmer, P. Lysaght, 2003 .

Plasma immersion ion implantation—a fledgling technique for semiconductor processing

Nathan W. Cheung, Chung Chan, Paul K. Chu, 1996 .

The dependence of ultrashallow junction depths on impact dose rates

S. Banerjee, E. Ishida, L. Larson, 1995 .

A study of wafer charging with CHARM and SPIDER monitors

W. Lukaszek, J. Shi, J. Liu, 1996, Proceedings of 11th International Conference on Ion Implantation Technology.

First-principles studies of di-arsenic interstitial and its implications for arsenic-interstitial diffusion in crystalline silicon

S. Banerjee, Ning Kong, L. Larson, 2007 .

Dose rate and thermal budget optimization for ultrashallow junctions formed by low‐energy (2–5 keV) ion implantation

S. Banerjee, E. Ishida, A. Sultan, 1996 .

Highly selective isotropic dry etch based nanofabrication

G. Gebara, M. Hussain, B. Sassman, 2007 .

Non-destructive detection of ion implant contamination: a SEMATECH/AMD study

Jinghong Shi, L. Larson, V. Wenner, 1995, Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop.

Physical characterization of high-k gate dielectric film systems processed by RTA and spike anneal

G. Bersuker, H. Huff, R. Murto, 2002, 10th IEEE International Conference of Advanced Thermal Processing of Semiconductors.