Lan-Qing Zou

Resistive Switching Characteristics of HfOx-Based Memristor by Inserting GeTe Layer

K. Xue, Hong Lu, Hua-Jun Sun, 2023, IEEE Transactions on Electron Devices.

Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO2/ZrO2 Superlattice Structure

Huajun Sun, Hong Lu, Xiangshui Miao, 2022, Advanced Electronic Materials.

Multilevel switching in Mg-doped HfOx memristor through the mutual-ion effect

X. Miao, Huajun Sun, K. Xue, 2021, Applied Physics Letters.

Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO2/ZrO2 Superlattice Structure

Huajun Sun, Hong Lu, Xiangshui Miao, 2022, Advanced Electronic Materials.