H. Hwang

Degradation of junction leakage in devices subjected to gate oxidation in nitrous oxide (MOS transistors)

P. Fazan, R. Maddox, V. K. Mathews, 1992, IEEE Electron Device Letters.

Electrical and reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric prepared by rapid thermal oxidation in N/sub 2/O

Jack C. Lee, D. Kwong, W. Ting, 1991 .

Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N/sub 2/O

Jack C. Lee, D. Kwong, H. Hwang, 1990, International Technical Digest on Electron Devices.

Effects of dynamic stressing on nitrided and reoxidized-nitrided chemical-vapor-deposited gate oxides

D. Kwong, J. Lee, W. Ting, 1989, IEEE Electron Device Letters.

Anomalous breakdown behavior in ultrathin oxides and oxynitrides under dynamic electrical stress

J. Lee, J. Lee, H. Hwang, 1992, IEEE Electron Device Letters.