J. Lee

Degradation of junction leakage in devices subjected to gate oxidation in nitrous oxide (MOS transistors)

P. Fazan, R. Maddox, V. K. Mathews, 1992, IEEE Electron Device Letters.

Electrical and reliability characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal processing in N/sub 2/O

Jack C. Lee, D. Kwong, H. Hwang, 1990, International Technical Digest on Electron Devices.