G. Jiang

C-V characteristics of metal ferroelectrics insulator semiconductor (MFIS) using a Au/Cr/PZT/ZrO2/Si structure

Yinyin Lin, T. Tang, Wei-ning Huang, 2001 .

Study on Thermal Stability of Thin CoSi s Film

P. Chu, G. Ru, G. Jiang, 1996 .

Electrical resistivity and Hall effect of TiSi2 thin films in the temperature range of 2–300 K

K. Daneshvar, A. Zhang, R. Aitken, 1989 .

Electrical transport properties of CoSi2 and Co(SixGe1−x)2 films formed by different methods

Bingquan Li, K. Daneshvar, G. Singco, 1991 .

Study on solid phase epitaxy of sputtered SiGe film

W. Qi, C. Lan, G. Jiang, 1995, Proceedings of 4th International Conference on Solid-State and IC Technology.

CoSi/sub 2//SiGe contact formation by Co/a-SiGe/Si solid state reaction

W. Qi, G. Jiang, Z. Gu, 1995, 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings.

XPS and AES studies of the interface reaction at the practical Pt/InP interface

Houwen Tang, I. Davoli, S. Stizza, 1992 .

Surface and interface morphology of CoSi2 films formed by multilayer solid-state reaction

X. Qu, G. Ru, R. L. Meirhaeghe, 2002 .

Self-aligned TiO2 thin films with remarkable hydrogen sensing functionality

G. Shao, X. Xia, Q. Deng, 2012 .

Investigation on solid phase epitaxy of deposited SiGe film on a Si substrate

P. Chu, W. Qi, R. J. Zhang, 1997 .

Observation of solid phase epitaxial growth of amorphous SiGe on Si(100) substrate

P. Chu, W. Qi, G. Jiang, 1995, 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings.