Song-Hyeon Kuk

Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization

Jaehoon Han, M. Park, Sang-Hyeon Kim, 2023, IEEE Electron Device Letters.

An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode

Jaehoon Han, S. Baek, Sang-Hyeon Kim, 2022, IEEE Transactions on Electron Devices.

Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND

Jaehoon Han, Sang-Hyeon Kim, Junpyo Kim, 2023, 2023 IEEE International Memory Workshop (IMW).

Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond Inference.

Sanghyeon Kim, S. Kim, Yeonjoo Jeong, 2023, Nano letters (Print).

Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors

S. Kim, Dae-Myeong Geum, S. Baek, 2023, IEEE Transactions on Electron Devices.

Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films

S. Baek, Ah-Jin Cho, J. Jeon, 2023, Applied Physics Letters.