H. Dill

发表

Recent Advances in Ion Implanted MOS Technology

T. N. Toombs, H. Dill, L. Bauer, 1971 .

Properties of silicon implanted with boron ions through thermal silicon dioxide.

M. Macpherson, H. Dill, L. Bauer, 1973 .

Noise contribution of the offset-gate i.g.f.e.t. with an additional gate electrode

H. Dill, 1967 .

MOS field effect transistors formed by gate masked ion implantation

H. G. Dill, K. G. Aubuchon, Robert W. Bower, 1968 .

Radiation Effects in Modified Oxide Insulators in MOS Structures

K. Aubuchon, H. Dill, C. Perkins, 1968 .

Electron gate currents and threshold stability in the n-channel stacked gate MOS tetrode

H. G. Dill, T. N. Toombs, D. M. Erb, 1971 .

A new MNOS charge storage effect

H. G. Dill, T. N. Toombs, H. Dill, 1969 .

A new IG tetrode with high drain breakdown potential

H. Dill, 1966 .

A new insulated gate tetrode with high drain breakdown potential and low miller feedback capacitance

H. G. Dill, H. Dill, 1968 .

Characterization of MOSFETs formed by gate masked ion implantation technique

S. A. Thompson, R. Bower, K. Aubuchon, 1968 .

Negative resistance with composited thin-film active devices

R. Zuleeg, H. Dill, 1964 .