Itaru Kamohara

发表

Rigorous wafer topography simulation for investigating wafer alignment quality and robustness

Detlef Hofmann, Nicolo Morgana, Andreas Greiner, 2015, Advanced Lithography.

Split, overlap/stitching, and process design for double patterning considering local reflectivity variation by using rigorous 3D wafer-topography/lithography simulation

Thomas Schmoeller, Itaru Kamohara, 2009, Advanced Lithography.

Experimental validation of stochastic modeling for negative-tone develop EUV resists

Geert Vandenberghe, Danilo De Simone, Eric Hendrickx, 2015, Advanced Lithography.

Comparative study of resolution limits for double patterning and EUV processes for the 32nm contact hole case

Keiichi Tajima, Thomas Schmoeller, Itaru Kamohara, 2010, Advanced Lithography.

Experimental validation of rigorous, 3D profile models for negative-tone develop resists

Peter De Bisschop, Thomas Schmoeller, Kevin Lucas, 2014, Advanced Lithography.

Role of ellipsometry in DPT process characterization and impact of performance for contact holes

Vitaliy Domnenko, Itaru Kamohara, Alexander Philippou, 2011, Photomask Japan.

Modeling EUVL patterning variability for metal layers in 5nm technology node and its effect on electrical resistance

Lawrence S. Melvin, Vincent Wiaux, Vicky Philipsen, 2017, Advanced Lithography.

Split, overlap, stitching, and process design for double patterning considering local reflectivity variation by using rigorous three-dimensional wafer-topography and lithography simulation

Itaru Kamohara, Thomas Schmöller, 2011 .

Simulation of heterojunction organic thin film devices and exciton diffusion analysis in stacked-hetero device

Itaru Kamohara, Mark A. Townsend, I. Kamohara, 2005 .