H. Jung

Hyper-FET’s Phase-Transition-Materials Design Guidelines for Ultra-Low Power Applications at 3 nm Technology Node

J. Jeon, J. Oh, Jeesoo Chang, 2022, Nanomaterials.

2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction

P. Hashemi, J. Nowak, P. Trouilloud, 2021, 2021 IEEE International Electron Devices Meeting (IEDM).

Modulation of Contact Resistance of Dual‐Gated MoS2 FETs Using Fermi‐Level Pinning‐Free Antimony Semi‐Metal Contacts

J. Jeon, W. Yoo, M. Choi, 2023, Advanced science.

Investigation of Optimal Architecture of MoS2 Channel Field-Effect Transistors on a Sub-2 nm Process Node

Jihun Park, J. Jeon, Jeesoo Chang, 2023, ACS Applied Electronic Materials.