Donald C. Hofer

发表

Lithographic performance of an environmentally stable chemically amplified photoresist (ESCAP)

Will Conley, Gregory Breyta, William R. Brunsvold, 1996, Advanced Lithography.

Modeling Planarization With Polymers

Donald C. Hofer, Debra B. LaVergne, 1985, Advanced Lithography.

Contrast Enhanced UV Lithography With Polysilanes

Donald C. Hofer, Andrew R. Neureuther, C. Grant Willson, 1984, Advanced Lithography.

High-resolution 248-nm bilayer resist

Gregory Breyta, Richard A. Di Pietro, Donald C. Hofer, 1999, Advanced Lithography.

Role of photoacid structure on the performance of 193-nm resists

Gregory Breyta, Richard A. Di Pietro, Donald C. Hofer, 1997, Advanced Lithography.

Polysilane Bilayer uv Lithography

Donald C. Hofer, C. Grant Willson, Robert D. Miller, 1984, Advanced Lithography.

Extension of 248-nm optical lithography: a thin film imaging approach

Donald C. Hofer, Gregory M. Wallraff, Timothy A. Brunner, 1998, Advanced Lithography.

Design of an etch-resistant cyclic olefin photoresist

Richard A. Di Pietro, Donald C. Hofer, Thomas I. Wallow, 1998, Advanced Lithography.

193-nm single-layer positive resists: building etch resistance into a high-resolution imaging system

Richard A. Di Pietro, Donald C. Hofer, Roderick R. Kunz, 1995, Advanced Lithography.

New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices

Will Conley, Gregory Breyta, William R. Brunsvold, 1997, Advanced Lithography.

Reactive ion etching of 193-nm resist candidates: current platforms and future requirements

Richard A. Di Pietro, Donald C. Hofer, Martin McCallum, 1998, Advanced Lithography.

New approaches to production-worthy 193-nm photoresists based on acrylic copolymers

Richard A. Di Pietro, Donald C. Hofer, Thomas I. Wallow, 1998, Advanced Lithography.

193-nm positive-tone bilayer resist based on norbornene-maleic anhydride copolymers

Richard A. Di Pietro, Donald C. Hofer, Gregory M. Wallraff, 2000, Advanced Lithography.

Limits to etch resistance for 193-nm single-layer resists

Richard A. Di Pietro, Donald C. Hofer, Roderick R. Kunz, 1996, Advanced Lithography.

Positive bilayer resists for 248- and 193-nm lithography

Richard A. Di Pietro, Donald C. Hofer, Gregory M. Wallraff, 1998, Advanced Lithography.

Lithographic characteristics of 193-nm resists imaged at 193 and 248 nm

Donald C. Hofer, Gregory M. Wallraff, Thomas I. Wallow, 1998, Advanced Lithography.

Approaches to etch-resistant 193-nm photoresists: performance and prospects

Gregory Breyta, Richard A. Di Pietro, Donald C. Hofer, 1999, Advanced Lithography.

Development of an incremental structural parameter model for predicting reactive ion etch rates of 193-nm photoresist polymer platforms

Richard A. Di Pietro, Donald C. Hofer, Martin McCallum, 1999, Advanced Lithography.

Photoresists for 193-nm lithography

Donald C. Hofer, Roderick R. Kunz, Gregory M. Wallraff, 1997, IBM J. Res. Dev..

Protecting groups for 193-nm photoresists

Gregory Breyta, Richard A. Di Pietro, Donald C. Hofer, 1996, Advanced Lithography.

Optimization of ESCAP photoresist for x-ray lithography

Gregory Breyta, Donald C. Hofer, Hiroshi Ito, 1994, Advanced Lithography.

Fabrication and performance studies of multilayer polymer/metal interconnect structures for packaging applications

Donald C. Hofer, Gerard V. Kopcsay, Alina Deutsch, 1991, 1991 Proceedings 41st Electronic Components & Technology Conference.

New high‐resolution charge transfer x‐ray and electron beam negative resist

Donald C. Hofer, Steven R. Kramer, Ari Aviram, 1980 .

Studies of chain conformational kinetics in poly(di-n-alkylsilanes) by spectroscopic methods. 1. Poly(di-n-hexylsilane), poly(di-n-heptylsilane), and poly(di-n-octylsilane)

Donald C. Hofer, J. F. Rabolt, J. Rabolt, 1986 .

Design Considerations for 193-nm Positive Resists

Donald C. Hofer, Roderick R. Kunz, Gregory M. Wallraff, 1995 .

Transfer etching of bilayer resists in oxygen-based plasmas

Donald C. Hofer, Marie Angelopoulos, John P. Simons, 2000 .

The Influence of Photoacid Structure on the Design and Performance of 193-nm Resists

Gregory Breyta, Donald C. Hofer, Thomas I. Wallow, 1997 .

Correlation of UVIIHS resist chemistry to dissolution rate measurements

Donald C. Hofer, James W. Thackeray, Theodore H. Fedynyshyn, 1996 .

DESIGN OF A POSITIVE RESIST FOR PROJECTION LITHOGRAPHY IN THE MID UV.

Donald C. Hofer, Grant Willson, Nicholas J. Clecak, 1983 .

Advanced Materials for Electronic Applications by Polymerization of Cyclic Olefins Using Late Transition Metal Catalysts

Donald C. Hofer, Thomas I. Wallow, Juliann Opitz, 1998 .

Chemistry and Characterization Of Polyimides Derived from Poly(Amic Alkyl Esters)

Donald C. Hofer, Willi Volksen, D. Y. Yoon, 1991 .

Anomalously long-wavelength electronic transition in conformationally locked organosilane high polymers

Donald C. Hofer, J. F. Rabolt, J. Rabolt, 1985 .

PHOTOCHEMICAL AND PHOTOPHYSICAL STUDIES ON CHEMICALLY AMPLIFIED RESISTS

Donald C. Hofer, Kevin M. Welsh, Nigel P. Hacker, 1992 .