James W. Thackeray

发表

Lithographic performance of an environmentally stable chemically amplified photoresist (ESCAP)

Will Conley, Gregory Breyta, William R. Brunsvold, 1996, Advanced Lithography.

Mechanistic understanding of post-etch roughness in 193-nm photoresists

James W. Thackeray, Young Cheol Bae, George G. Barclay, 2003, SPIE Advanced Lithography.

Materials challenges for sub-20nm lithography

James W. Thackeray, 2011, Advanced Lithography.

Systematic investigation of the synthesis, characterization and switching mechanism of metal oxide nanoparticle resists

James W. Thackeray, Ke Du, Peter Trefonas, 2016, SPIE Advanced Lithography.

Design and performance of photoresist materials for ArF lithography

James W. Thackeray, George G. Barclay, Robert J. Kavanagh, 2001, SPIE Advanced Lithography.

Development of two new positive DUV photoresists for use with direct-write e-beam lithography

James W. Thackeray, William J. Dauksher, Kevin J. Nordquist, 1996, Advanced Lithography.

Silylated Acid Hardened Resist [SAHR] Technology: Positive, Dry Developable Deep UV Resists

James W. Thackeray, Stephen M. Bobbio, Susan K. Jones, 1990, Other Conferences.

Chemically amplified resists resolving 25 nm 1:1 line: space features with EUV lithography

Yayi Wei, James W. Thackeray, Patrick P. Naulleau, 2007, SPIE Advanced Lithography.

Thick-film positive DUV photoresist for implant layer application

James W. Thackeray, Cheng-Bai Xu, Rosemary Bell, 2000, Advanced Lithography.

Continuous evolution of lithographic films through process steps: an example with 193 chemically amplified resists

James W. Thackeray, Patrick Paniez, Raluca Tiron, 2010, Advanced Lithography.

Investigation of lithographic performance for 120-nm and sub-120-nm gate applications of advanced ArF resists based on VEMA co-polymers

James W. Thackeray, George G. Barclay, Robert J. Kavanagh, 2002, SPIE Advanced Lithography.

Effect of resin molecular weight on the resolution of DUV negative photoresists

James W. Thackeray, George W. Orsula, Mark D. Denison, 1994, Advanced Lithography.

Chemically amplified resists

James W. Thackeray, Charles R. Szmanda, Angelo A. Lamola, 1991 .

Stochastic exposure kinetics of EUV photoresists: a simulation study

James W. Thackeray, John J. Biafore, Chris A. Mack, 2011, Advanced Lithography.

Toward the development of a stable chemically amplified DUV positive photoresist

James W. Thackeray, Roger F. Sinta, David R. Medeiros, 1992, Advanced Lithography.

Ultrathin DUV resists for logic applications

James W. Thackeray, Doris Kang, James F. Cameron, 2002, SPIE Advanced Lithography.

Chemically amplified resists for I-line and G-line applications

James W. Thackeray, Roger F. Sinta, Stephen D. Thompson, 1990, Advanced Lithography.

Roughness power spectral density as a function of resist parameters and its impact through process

James W. Thackeray, Charlotte Cutler, Mingqi Li, 2018, Advanced Lithography.

Improved resolution with advanced negative DUV photoresist with 0.26N capability

William R. Brunsvold, James W. Thackeray, Laura L. Kosbar, 1999, Advanced Lithography.

New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices

Will Conley, Gregory Breyta, William R. Brunsvold, 1997, Advanced Lithography.

Evolution of lithographic materials enabling the semiconductor industry

James W. Thackeray, James F. Cameron, Cheng Bai Xu, 2019, Advanced Lithography.

Dissolution inhibition mechanism of ANR photoresists: crosslinking vs. -OH site consumption

James W. Thackeray, Roger F. Sinta, George W. Orsula, 1991, Other Conferences.

DUV positive resist system designed for Micrascan use

James W. Thackeray, Roger F. Sinta, Theodore H. Fedynyshyn, 1995, Advanced Lithography.

Systematic investigation of the photoresponse and dissolution characteristics of an acid-hardening resist

James W. Thackeray, Masayuki Endo, Henry T. Gaw, 1990, Advanced Lithography.

Bottom-up/top-down high resolution, high throughput lithography using vertically assembled block bottle brush polymers

James W. Thackeray, Ang Li, Corrie Clark, 2013, Advanced Lithography.

ANR photoresist process optimization at 248 nm

James W. Thackeray, Christophe Pierrat, Francoise Vinet, 1990, Advanced Lithography.

Statistical simulation of photoresists at EUV and ArF

James W. Thackeray, Trey Graves, David Blankenship, 2009, Advanced Lithography.

Film life enhancement of chemically amplified electron-beam resists

James W. Thackeray, Theodore H. Fedynyshyn, Michael F. Cronin, 1993, Advanced Lithography.

A novel switchable BARC (SBARC) and process to improve pattern collapse and defect control

James W. Thackeray, John Lin, Burn Jeng Lin, 2006, SPIE Advanced Lithography.

Investigation of onium salt type photoacid generators in positive DUV resist systems

James W. Thackeray, Roger F. Sinta, Theodore H. Fedynyshyn, 1994, Advanced Lithography.

193nm resist deprotection study from outgassing measurements by TD-GCMS/FID

James W. Thackeray, Patrick Paniez, Raluca Tiron, 2010, European Mask and Lithography Conference.

Characterization and modeling of a positive-acting chemically amplified resist

James W. Thackeray, Roger F. Sinta, Daniel A. Miller, 1995, Advanced Lithography.

Additive chemistry and distributions in NTD photoresist thin films

James W. Thackeray, Michael B. Clark, Chang-Young Hong, 2016, SPIE Advanced Lithography.

Optimization of low-diffusion EUV resist for linewidth roughness and pattern collapse on various substrates

Akiteru Ko, James W. Thackeray, Warren Montgomery, 2012, Other Conferences.

Development of DUV resist formulations with excellent performance on metal substrates

James W. Thackeray, Roger F. Sinta, Doris Kang, 1998, Advanced Lithography.

Bottom-up/top-down, high-resolution, high-throughput lithography using vertically assembled block bottle brush polymers

James W. Thackeray, Peter Trefonas, Ang Li, 2013 .

Silylation processes for 193-nm lithography using acid-catalyzed resists

James W. Thackeray, Mark A. Hartney, 1992, Advanced Lithography.

Deep UV ANR Photoresists For 248 nm Excimer Laser Photolithography

James W. Thackeray, Amanda K. Berry, Karen A. Graziano, 1989, Advanced Lithography.

Pattern roughness analysis using power spectral density: application and impact in photoresist formulation

James W. Thackeray, Peter Trefonas, Charlotte Cutler, 2021 .

Understanding the Role of Acid vs. Electron Blur in EUV Resist Materials

James W. Thackeray, John J. Biafore, Mike Wagner, 2010 .

Chemically responsive microelectrochemical devices based on platinized poly(3-methylthiophene): variation in conductivity with variation in hydrogen, oxygen, or pH in aqueous solution

James W. Thackeray, J. Thackeray, M. Wrighton, 1986 .

Following the Acid: Effect of Acid Surface Depletion on Phenolic Polymers

James W. Thackeray, Roger F. Sinta, Theodore H. Fedynyshyn, 1995 .

Nanoscopic cylindrical dual concentric and lengthwise block brush terpolymers as covalent preassembled high-resolution and high-sensitivity negative-tone photoresist materials.

James W. Thackeray, Peter Trefonas, Michael J. Eller, 2013, Journal of the American Chemical Society.

Poly(3-methylthiophene)-coated electrodes: optical and electrical properties as a function of redox potential and amplification of electrical and chemical signals using poly(3-methylthiophene)-based microelectrochemical transistors

James W. Thackeray, J. Thackeray, H. White, 1985 .

Effect of acid diffusion on performance in positive deep ultraviolet resists

James W. Thackeray, Theodore H. Fedynyshyn, Mark D. Denison, 1994 .

Correlation of UVIIHS resist chemistry to dissolution rate measurements

Donald C. Hofer, James W. Thackeray, Theodore H. Fedynyshyn, 1996 .

Optimization of Polymer-bound PAG (PBP) for 20nm EUV Lithography

James W. Thackeray, James F. Cameron, Su-Jin Kang, 2011 .

SURVEY OF PROCESSING AFFECTS ON SUBSTRATE COMPATIBILITY OF CHEMICALLY AMPLIFIED RESISTS

James W. Thackeray, John L. Sturtevant, Ronald A. Carpio, 1995 .

Some Resists Based On Chemically-Amplified Crosslinking Of Phenolic Polymers

James W. Thackeray, Roger F. Sinta, Theodore H. Fedynyshyn, 1990 .

Evaluation of High and Low Activation Resists for EUV Lithography

James W. Thackeray, Roger A. Nassar, Tom Wallow, 2006 .

Dissolution rate properties of three‐component deep‐ultraviolet positive photoresists

James W. Thackeray, Theodore H. Fedynyshyn, George W. Orsula, 1993 .

Approaches to deep ultraviolet photolithography utilizing acid hardened resin photoresist systems

James W. Thackeray, John F. Bohland, George W. Orsula, 1989 .