Haizhou Yin

Integration Issue of Tensile SiN Liner for Dual Stress Liner(DSL) in Gate-Last High-k/Metal Gate(HKMG) Process Flow

Qiang Xu, Tao Yang, Peizhen Hong, 2013 .

Punch through stop layer optimization in bulk FinFETs

Rui Li, Chao Zhao, Yunfei Liu, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status

Jun Luo, Jiang Yan, Huajie Zhou, 2011 .

Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22 nm node pMOSFETs

Tianchun Ye, Zhaoyun Tang, Chao Zhao, 2015 .

Integration of Local Stress Techniques with Strained-Si Directly on Insulator (SSDOI) Substrates

Y.H. Kim, M. Ieong, T. Kanarsky, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Study of sigma-shaped source/drain recesses for embedded-SiGe pMOSFETs

Peizhen Hong, Chao Zhao, Huilong Zhu, 2017 .

Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

Chao Zhao, Jiang Yan, Changliang Qin, 2013 .

High performance cmos bulk technology using direct silicon bond (dsb) mixed crystal orientation substrates

Chun-Yung Sung, Zhijiong Luo, Haizhou Yin, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates

Keith E. Fogel, Chun-Yung Sung, John A. Ott, 2005 .

Mixed Orientation Si–Si Interfaces by Hydrophilic Bonding and High Temperature Oxide Dissolution

Keith E. Fogel, John A. Ott, Haizhou Yin, 2008 .