Shin-ichi O'uchi

发表

Static Noise Margin Enhancement by Flex-Pass-Gate SRAM

Meishoku Masahara, Kazuhiko Endo, Takashi Matsukawa, 2008 .

Highly Reliable SRAM Circuit Technology Using FinFETs

Hiromi Yamauchi, Meishoku Masahara, Kazuhiko Endo, 2009 .

Enhancing SRAM performance by advanced FinFET device and circuit technology collaboration for 14nm node and beyond

Meishoku Masahara, Shinji Migita, Kazuhiko Endo, 2013, 2013 Symposium on VLSI Circuits.

Variability Analysis of TiN FinFET SRAM Cells and Its Compensation by Independent-DG FinFETs

Hiromi Yamauchi, Kunihiro Sakamoto, Takashi Matsukawa, 2010, IEEE Electron Device Letters.

0.8-V rail-to-rail operational amplifier with near-Vt gain-boosting stage fabricated in FinFET technology for IoT sensor nodes

Takashi Matsukawa, Meishoku Masahara, Tadashi Nakagawa, 2015, 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

May the fourth (terminal) be with you - circuit design beyond FinFET

Kunihiro Sakamoto, Toshiyuki Tsutsumi, Takashi Matsukawa, 2010, 2010 International Electron Devices Meeting.

HiSIM-DG for extracting statistical variations of measured I-V characteristics

M. Masahara, M. Miura-Mattausch, Shin-ichi O'uchi, 2011 .

Flex-pass-gate SRAM for static noise margin enhancement using FinFET-based technology

Meishoku Masahara, Kazuhiko Endo, Yongxun Liu, 2008 .

Invited) FinFET Flash Memory Technology

Hiromi Yamauchi, Meishoku Masahara, Atsushi Ogura, 2012 .

Correlative analysis between characteristics of 30-nm LG FinFETs and SRAM performance

Hiromi Yamauchi, Kunihiro Sakamoto, Takashi Matsukawa, 2011, 2011 International Electron Devices Meeting.

INVITED PAPER Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology Independent-Double-Gate FinFET SRAM Technology

Nonmembers, Meishoku Masahara, Yongxun Liu, 2013 .

Robust and compact key generator using physically unclonable function based on logic-transistor-compatible poly-crystalline-Si channel FinFET technology

Yohei Hori, Hiroshi Fuketa, Takashi Matsukawa, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

Takashi Matsukawa, Meishoku Masahara, Kazuhiko Endo, 2014 .

Advanced TiN Metal-Gate FinFET Technology

Hiromi Yamauchi, M. Masahara, Kazuhiko Endo, 2006 .

Unexpected equivalent-oxide-thickness dependence of the subthreshold swing in tunnel field-effect transistors

Meishoku Masahara, Tetsuji Yasuda, A. Tanabe, 2014 .

Variability Analysis of TiN Metal-Gate FinFETs

Hiromi Yamauchi, Kunihiro Sakamoto, Takashi Matsukawa, 2010, IEEE Electron Device Letters.

EOT Scaling in Tunnel Field-Effect Transistors: Trade-off between Subthreshold Steepness and Gate Leakage

M. Masahara, Tetsuji Yasuda, A. Tanabe, 2012 .

A Programmable SIMD Processor for Universal Quantum-Circuit Simulator

Minoru Fujishima, Koichiro Hoh, Shin-ichi O'uchi, 2001 .

Demonstration and Analysis of Accumulation-Mode Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor

Kenichi Ishii, Takashi Matsukawa, Meishoku Masahara, 2006 .

Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application

Hiromi Yamauchi, Kunihiro Sakamoto, Kenichi Ishii, 2008 .

Comprehensive analysis of Ion variation in metal gate FinFETs for 20nm and beyond

Hiromi Yamauchi, Kunihiro Sakamoto, Takashi Matsukawa, 2011, 2011 International Electron Devices Meeting.

Closed-form analytical model of static noise margin for ultra-low voltage eight-transistor tunnel FET static random access memory

Hiroshi Fuketa, Takashi Matsukawa, Meishoku Masahara, 2016 .

Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates

Hiromi Yamauchi, Kunihiro Sakamoto, Kenichi Ishii, 2009 .

Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation

Hiromi Yamauchi, Kunihiro Sakamoto, T. Hayashida, 2012 .

Tunnel Field-Effect Transistors with Extremely Low Off-Current Using Shadowing Effect in Drain Implantation

Kunihiro Sakamoto, Meishoku Masahara, Tetsuji Yasuda, 2011 .