Abel Fontserè

Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs

Philippe Godignon, Peter Moens, Amador Pérez-Tomás, 2012, Microelectron. Reliab..

Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1)

Amador Pérez-Tomás, Abel Fontserè, Yvon Cordier, 2012, Microelectron. Reliab..

Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN

Amador Pérez-Tomás, M. R. Jennings, Abel Fontserè, 2011, Microelectron. Reliab..

High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C

Philippe Godignon, Peter Moens, Amador Pérez-Tomás, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).