Tomas Palacios

发表

Two-dimensional materials based transparent flexible electronics

Anantha P. Chandrakasan, Lili Yu, Sungjae Ha, 2015 .

Graphene electronics for RF applications

Han Wang, Jing Kong, Tomas Palacios, 2012, 2011 IEEE MTT-S International Microwave Symposium.

GaNFET compact model for linking device physics, high voltage circuit design and technology optimization

Pilsoon Choi, Ujwal Radhakrishna, Dimitri Antoniadis, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Wide-Bandgap Power Switch Reliability for Energy Grid Applications.

Min Sun, Matthew Marinella, Stanley Atcitty, 2012 .

A Technology Overview of the PowerChip Development Program

Charles R. Sullivan, Jun Chen, Jeffrey H. Lang, 2013, IEEE Transactions on Power Electronics.

Building Flexible, Microscopic Sensor Nodes with 2D Materials

Elaine McVay, Tomas Palacios, Marek Hempel, 2018 .

Towards ubiquitous RF electronics based on graphene

Han Wang, Jing Kong, Tomas Palacios, 2012, 2012 IEEE/MTT-S International Microwave Symposium Digest.

GaN power electronics

Daniel Piedra, Bin Lu, Tomas Palacios, 2010, The Eighth International Conference on Advanced Semiconductor Devices and Microsystems.

Guest Editorial Special Issue on GaN Electronic Devices

Giovanni Ghione, Gaudenzio Meneghesso, Ruediger Quay, 2013 .

Graphene-Based Ambipolar RF Mixers

Han Wang, Justin Wu, Jing Kong, 2010, IEEE Electron Device Letters.

The challenges and rewards of Industry/University collaborative research

Tomas Palacios, 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

Two-dimensional materials for ubiquitous electronics

Xu Zhang, Charles Mackin, Lili Yu, 2013, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT).

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Carl V. Thompson, Tomas Palacios, Jesus A. del Alamo, 2010 .

>1200 V GaN-on-silicon Schottky diode

Timothy Boles, Richard J. Molnar, Tomas Palacios, 2013 .

AlGaN/AlN integrated photonics platform for the ultraviolet and visible spectral range.

Richard Soref, Dirk Englund, Mohammad Soltani, 2016, Optics express.

Self-consistent electro-thermal simulation of AlGaN/GaN HEMTs for reliability prediction

Feng Gao, Tomas Palacios, Hsin-Yi Lo, 2010, 68th Device Research Conference.

AlGaN/GaN High Electron Mobility Transistors

Umesh K. Mishra, Tomas Palacios, T. Palacios, 2007 .

Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier

Martin Kuball, Tomas Palacios, M. Tapajna, 2011 .

A Comparison of Single-Wall Carbon Nanotube Electrochemical Capacitor Electrode Fabrication Methods

Tomas Palacios, Benjamin Mailly, Matthew H. Ervin, 2012 .

Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit

W. E. Hoke, T. E. Kazior, Hyung-Seok Lee, 2012 .

Role of Molecular Sieves in the CVD Synthesis of Large‐Area 2D MoTe2

Jing Kong, Ahmad Zubair, Tomas Palacios, 2017 .

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

Tomas Palacios, Tatsuya Fujishima, T. Palacios, 2013 .

N‐face high electron mobility transistors with a GaN‐spacer

James S. Speck, Umesh K. Mishra, Siddharth Rajan, 2007 .

Impact of Water-Assisted Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTs

Feng Gao, Carl V. Thompson, Tomas Palacios, 2014, IEEE Transactions on Electron Devices.

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] Passivation

Xiang Gao, Tomas Palacios, Omair I. Saadat, 2009 .

Advanced gate technologies for state-of-the-art fT in AlGaN/GaN HEMTs

Tomas Palacios, Tae-Woo Kim, T. Palacios, 2010, 2010 International Electron Devices Meeting.

Materials and processing issues in vertical GaN power electronics

Daniel Piedra, Nadim Chowdhury, Tomas Palacios, 2017 .

Edge plasmons and cut-off behavior of graphene nano-ribbon waveguides

Jinghua Teng, Soo Jin Chua, Tomas Palacios, 2016 .

High voltage GaN HEMT compact model: Experimental verification, field plate optimization and charge trapping

Daniel Piedra, Ujwal Radhakrishna, Dimitri Antoniadis, 2013, 2013 IEEE International Electron Devices Meeting.

Assessment of GaN metal-semiconductor-metal photodiodes for high-energy ultraviolet photodetection

Eva Monroy, Tomas Palacios, Fernando Calle, 2002 .

MIT virtual source GaNFET‐high voltage (MVSG‐HV) model: A physics based compact model for HV‐GaN HEMTs

Dimitri A. Antoniadis, Ujwal Radhakrishna, Tomas Palacios, 2014 .

High linearity nanowire channel GaN HEMTs

Yu Cao, Paul Saunier, Michael Schuette, 2013, 71st Device Research Conference.

Engineering of an insulating buffer and use of aln interlayers: two optimisations for AlGaN-GaN HEMT-like structures

Ingrid Moerman, L. C. Nistor, Eva Monroy, 2003 .

MIT virtual source GaNFET-RF compact model for GaN HEMTs: From device physics to RF frontend circuit design and validation

Li-Shiuan Peh, Sushmit Goswami, Pilsoon Choi, 2014, 2014 IEEE International Electron Devices Meeting.

Gigahertz ambipolar frequency multiplier based on CVD graphene

Jing Kong, Tomas Palacios, Allen Hsu, 2010, 2010 International Electron Devices Meeting.

Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$

Michael L. Schuette, Paul Saunier, Yu Cao, 2013 .

Negative Capacitance Carbon Nanotube FETs

Ahmad Zubair, Gage Hills, Max M. Shulaker, 2018, IEEE Electron Device Letters.

Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures

Umesh K. Mishra, Alessandro Chini, Tomas Palacios, 2003 .

Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.

Jing Kong, Anantha Chandrakasan, Ahmad Zubair, 2016, Nano letters.

Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

James S. Speck, Umesh K. Mishra, Tomas Palacios, 2011 .

Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors

Feng Gao, James S. Speck, Carl V. Thompson, 2011 .

Optimization of AlGaN/GaN HEMTs for high frequency operation

Umesh K. Mishra, S. P. DenBaars, Tomas Palacios, 2006 .

Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment

Daniel Piedra, Hyung-Seok Lee, Tomas Palacios, 2013 .

GaN-on-Si technology, a new approach for advanced devices in energy and communications

Tomas Palacios, K. Ryu, J. W. Chung, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Integrated GaN photonic circuits on silicon (100) for second harmonic generation.

Wolfram Pernice, Tomas Palacios, Chi Xiong, 2011, Optics express.

Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

Huili Grace Xing, Gaudenzio Meneghesso, Enrico Zanoni, 2020, physica status solidi (a).

Erratum: Electronics based on two-dimensional materials

Giuseppe Iannaccone, Luigi Colombo, Daniel Neumaier, 2014 .

AlGaN/GaN HEMT With 300-GHz $f_{\max}$

W. E. Hoke, Tomas Palacios, W. Hoke, 2010 .

Use of THz Photoconductive Sources to Characterize Tunable Graphene RF Plasmonic Antennas

Tomas Palacios, Allen Hsu, Albert Cabellos, 2014, 1401.6878.

Use of Terahertz Photoconductive Sources to Characterize Tunable Graphene RF Plasmonic Antennas

Albert Cabellos-Aparicio, Eduard Alarcon, Ignacio Llatser, 2015, IEEE Transactions on Nanotechnology.

Trench formation and corner rounding in vertical GaN power devices

Daniel Piedra, Xiang Gao, Tomas Palacios, 2017 .

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Daniel Piedra, Tomas Palacios, Puneet Srivastava, 2015, IEEE Transactions on Electron Devices.

Comparative Breakdown Study of Mesa- and Ion-Implantation-Isolated AlGaN/GaN High-Electron-Mobility Transistors on Si Substrate

Daniel Piedra, Hyung-Seok Lee, Tomas Palacios, 2012 .

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Kuei-Shu Chang-Liao, Tomas Palacios, Omair I. Saadat, 2013 .

Current Collapse Suppression in AlGaN/GaN HEMTs by Means of Slant Field Plates Fabricated by Multi-layer SiCN

Tetsuya Suemitsu, Daniel Piedra, Kengo Kobayashi, 2014 .

Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition.

Jing Kong, Tomas Palacios, Allen Hsu, 2012, Nano letters.

Reliability of Schottky contacts on AlGaN.

Ingrid Moerman, Eva Monroy, Pierre Ruterana, 2001 .

Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs

Tomas Palacios, Omair I. Saadat, T. P. Ma, 2013, IEEE Transactions on Nuclear Science.

Study of AlGaN/GaN HEMT degradation through TCAD simulations

Feng Gao, Tomas Palacios, R. V. Mickevicius, 2014, 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

Tomas Palacios, Edwin L. Piner, B. Lu, 2010, 68th Device Research Conference.

with InGaN back-barrier

Martin Kuball, Tomas Palacios, Milan Ťapajna, 2011 .

Die level thermal storage for improved cooling of pulsed devices

Feng Gao, Xudong Tang, Tomas Palacios, 2011, 2011 27th Annual IEEE Semiconductor Thermal Measurement and Management Symposium.

LETTER TO THE EDITOR: Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N

Ingrid Moerman, Martin Eickhoff, Eva Monroy, 2002 .

Nanotechnology for SAW devices on AlN epilayers

Martin Eickhoff, Oliver Ambacher, Jesus Grajal, 2002 .

On-wafer integration of nitrides and Si devices: Bringing the power of polarization to Si

Tomas Palacios, Jinwook W. Chung, Bin Lu, 2009, 2009 IEEE MTT-S International Microwave Symposium Digest.

Submicron technology for III-nitride semiconductors

E. Muñoz, Eva Monroy, Tomas Palacios, 2002 .

Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

Nicholas C. Hooten, En Xia Zhang, Ronald D. Schrimpf, 2013, IEEE Transactions on Nuclear Science.

AlGaN/GaN HEMT With 300-GHz $f_{\max}$

W. E. Hoke, Tomas Palacios, W. Hoke, 2010, IEEE Electron Device Letters.

High voltage GaN‐on‐silicon HEMT

Timothy Boles, Richard J. Molnar, Tomas Palacios, 2013 .

Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth

James S. Speck, Umesh K. Mishra, Tomas Palacios, 2007 .

An Ambipolar Virtual-Source-Based Charge-Current Compact Model for Nanoscale Graphene Transistors

Phaedon Avouris, Dimitri A. Antoniadis, Shaloo Rakheja, 2014, IEEE Transactions on Nanotechnology.

Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment

Tomas Palacios, Omair I. Saadat, Edwin L. Piner, 2009, 2009 Device Research Conference.

Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance

Xiang Gao, Tomas Palacios, Shiping Guo, 2010 .