S. Coelho

发表

A compact streak camera for 150 fs time resolved measurement of bright pulses in ultrafast electron diffraction.

F. D. Auret, E. Rohwer, H. Schwoerer, 2010, The Review of scientific instruments.

Photo-triggered pulsed cavity compressor for bright electron bunches in ultrafast electron diffraction

H. Schwoerer, N. Erasmus, K. Haupt, 2012 .

Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (1 0 0)

F. D. Auret, A. Chawanda, W. Mtangi, 2012 .

Long range annealing of defects in germanium by low energy plasma ions

F. D. Auret, J. Archilla, V. Hizhnyakov, 2015 .

Experimental Observation of Intrinsic Localized Modes in Germanium

F. D. Auret, J. Archilla, V. Hizhnyakov, 2013, 1311.4269.

Gross features of finite nuclei at finite temperatures

H. G. Miller, S. Coelho, C. Zander, 2008, 0805.4271.

A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques

Albert Chawanda, F. D. Auret, A. Chawanda, 2011 .

Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

F. D. Auret, A. Chawanda, W. Mtangi, 2012 .

Electrical characterisation of electron beam exposure induced defects in silicon

F. D. Auret, M. Diale, H. Danga, 2016 .

Electrical characterization of defects introduced in n‐Si during electron beam deposition of Pt

F. D. Auret, J. Nel, W. Meyer, 2012 .

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

F. Auret, C. Theron, E. Njoroge, 2014 .

Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

W. E. Meyer, F. D. Auret, E. Omotoso, 2016 .

Unexpected properties of the inductively coupled plasma induced defect in germanium

F. D. Auret, P. V. Rensburg, J. Nel, 2014 .

Electrical characterization of defects introduced during metallization processes in n-type germanium

F. D. Auret, P. V. Rensburg, W. Meyer, 2008 .

Electrical characterization of defects introduced in Ge during electron beam deposition of different metals

F. D. Auret, M. Hayes, J. Nel, 2008 .

Electrical Characterization of Defects Introduced During Sputter Deposition of Schottky Contacts on n-type Ge

F. D. Auret, M. Hayes, J. Nel, 2007 .

Electrical characterization of defects in heavy-ion implanted n-type Ge

F. D. Auret, A. Vantomme, D. Smeets, 2007 .

Electrical characterization of defects introduced during electron beam deposition of Schottky contacts on n-type Ge

F. D. Auret, M. Hayes, J. Nel, 2006 .

Electrical characterization of defects introduced during electron beam deposition of Pd Schottky contacts on n-type Ge

F. D. Auret, M. Hayes, W. Meyer, 2006 .

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

F. D. Auret, C. Theron, E. Njoroge, 2014, Brazilian Journal of Physics.

Effects of 5.4 MeV alpha-particle irradiation on the electrical properties of nickel Schottky diodes on 4H-SiC

F. D. Auret, E. Omotoso, A. Paradzah, 2015 .

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

F. D. Auret, E. Omotoso, A. Paradzah, 2015 .

Defect introduction in Ge during inductively coupled plasma etching and Schottky barrier diode fabrication processes

F. D. Auret, P. V. Rensburg, G. Myburg, 2010 .

Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium

F. D. Auret, P. V. Rensburg, G. Myburg, 2009 .

Electrical characterization of process induced defects in germanium

S. Coelho, 2015 .

Characterization of the E(0.31) defect introduced in bulk n-Ge by H or He plasma exposure

F. D. Auret, D. Murape, A. Venter, 2012 .

Ar plasma induced deep levels in epitaxial n-GaAs

J. R. Botha, F. D. Auret, V. Kolkovsky, 2012 .

Microstructural and surface characterization of thin gold films on n-Ge (111)

F. D. Auret, A. Chawanda, W. Jordaan, 2009 .

RBS investigation of annealed thin gold layers on crystalline germanium

F. D. Auret, F. Schrempel, W. Wesch, 2008 .

The origin of defects induced in ultra-pure germanium by Electron Beam Deposition

F. D. Auret, J. Archilla, J. Nel, 2015, 1505.04279.

Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS

W. E. Meyer, F. D. Auret, M. Legodi, 2012 .

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

F. Auret, C. Theron, E. Njoroge, 2014 .

Solid state reaction of ruthenium with silicon carbide, and the implications for its use as a Schottky contact for high temperature operating Schottky diodes

F. Auret, C. Theron, E. Njoroge, 2014 .

The origin of defects induced in ultra-pure germanium by Electron Beam Deposition

F. D. Auret, J. Archilla, S. Coelho, 2015, 1505.04279.

Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure

F. D. Auret, P. V. Rensburg, J. Nel, 2013 .