Michael Yeung

发表

193nm inspection of extreme ultraviolet mask absorber defect

Chang-Moon Lim, Guk-Jin Kim, In-Seon Kim, 2014, Advanced Lithography.

A high-frame-rate DUV-optimized CCD for simultaneous measurements of illumination intensity, polarization amplitude, and polarization direction for very high NA imaging systems

Roderick R. Kunz, Michael Yeung, Steven J. Spector, 2004, SPIE Advanced Lithography.

Aerial image of mesh supported extreme ultraviolet pellicle

Eytan Barouch, Guk-Jin Kim, Michael Yeung, 2014, Advanced Lithography.

Anisotropic shadow effects with various pattern directions in an anamorphic high numerical aperture system

Eytan Barouch, Guk-Jin Kim, In-Seon Kim, 2016 .

Effect of defects on extreme ultraviolet pellicle

Eytan Barouch, Guk-Jin Kim, In-Seon Kim, 2014, Advanced Lithography.

Influence of a wrinkle in terms of critical dimension variation caused by transmission nonuniformity and a particle defect on extreme ultraviolet pellicle

Guk-Jin Kim, In-Seon Kim, Michael Yeung, 2017 .

Mask three-dimensional effects of etched multilayer mask for 16-nm half-pitch in extreme ultraviolet lithography

Guk-Jin Kim, In-Seon Kim, Michael Yeung, 2016 .

Arc-shaped slit effect of EUV lithography with anamorphic high-NA system in terms of critical dimension variation

Eytan Barouch, Guk-Jin Kim, In-Seon Kim, 2017, Advanced Lithography.

Impact of non-uniform wrinkles for a multi-stack pellicle in EUV lithography

Guk-Jin Kim, In-Seon Kim, Michael Yeung, 2017, Advanced Lithography.

Influence of non-uniform intensity distribution of deformed pellicle for N7 patterning

Eytan Barouch, Guk-Jin Kim, In-Seon Kim, 2016, Photomask Technology.

Etched multilayer mask in EUV lithography for 16 nm node and below

Eytan Barouch, Guk-Jin Kim, Michael Yeung, 2014, Photomask and Next Generation Lithography Mask Technology.

The feasibility of EUV lithography for printing circuits with 4 nm feature size

Eytan Barouch, Michael Yeung, 2014, Photomask Technology.

Impact of deformed extreme-ultraviolet pellicle in terms of CD uniformity

Eytan Barouch, In-Seon Kim, Michael Yeung, 2015, Other Conferences.

Aerial image deformation caused by various defects of EUV pellicles

Eytan Barouch, Michael Yeung, Hye-Keun Oh, 2014, Advanced Lithography.

Etched multilayer mask is better than conventional absorber mask

Eytan Barouch, Guk-Jin Kim, In-Seon Kim, 2014, Photomask and Next Generation Lithography Mask Technology.

A very fast and accurate rigorous EMF simulator for EUVL masks based on the pseudo-spectral time-domain method

Eytan Barouch, Michael Yeung, 2013, Photomask and Next Generation Lithography Mask Technology.

Impact of a deformed extreme ultraviolet pellicle in terms of the critical dimension uniformity

Eytan Barouch, In-Seon Kim, Michael Yeung, 2016 .

Non-isotropic shadow effect with various pattern direction in anamorphic high numerical aperture system

Eytan Barouch, Guk-Jin Kim, In-Seon Kim, 2016, SPIE Advanced Lithography.