Kensuke Akiyama

发表

Epitaxial growth and photoluminescence properties of β-FeSi2 grains using liquid phase obtained by Au-Si eutectic reaction

Kensuke Akiyama, Hiroshi Funakubo, 2016, SPIE OPTO.

Room temperature photoluminescence spectrum from β-FeSi2 films

Kensuke Akiyama, Hiroshi Funakubo, Yoshihisa Matsumoto, 2018, OPTO.

Epitaxial growth of luminescent β-FeSi2 on modified Si(111) surface by silver

Kensuke Akiyama, Hiroshi Funakubo, 2015, Photonics West - Optoelectronic Materials and Devices.

Preparation of β-Fesi2 thin film by metal organic chemical vapor deposition using iron-carbonyl and mono-silane

Seishiro Ohya, Kensuke Akiyama, Hiroshi Funakubo, 2004 .

Growth of β-FeSi_2 Thin Film on Si (111) by Metal-Organic Chemical Vapor Deposition : Surfaces, Interfaces, and Films

Seishiro Ohya, Kensuke Akiyama, Hiroshi Funakubo, 2001 .

Composition dependence of constituent phase of Fe-Si thin film prepared by MOCVD

Ken Numata, Seishiro Ohya, Kensuke Akiyama, 2002 .

Effect of Buffer Layer on Epitaxial Growth of YSZ Deposited on Si Substrate by Slower Q-switched 266 nm YAG Laser

Satoru Kaneko, Takeshi Ito, Seishiro Ohya, 2004 .

Photoluminescent iron disilicide on modified Si surface by using silver

Kensuke Akiyama, Hiroshi Funakubo, Masaru Itakura, 2015 .

Photoluminescence Properties from β-FeSi2 Film Epitaxially Grown on Si, YSZ and Si//YSZ

Satoru Kaneko, Kensuke Akiyama, Hiroshi Funakubo, 2005 .

Fabrication of iron silicides photonic crystals

Kensuke Akiyama, Yoshihito Maeda, Shunsuke Kunimatsu, 2006 .

Growth of Epitaxial β-FeSi2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition

Takeshi Kimura, Kensuke Akiyama, Hiroshi Funakubo, 2004 .