Naofumi Ueno

Monolayer and Fluorescence Properties of a Chiral Amphiphilic Ruthenium(II) Complex at an Air−Water Interface

M. Shimomura, A. Yamagishi, O. Karthaus, 1999 .

Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating

M. Sakuraba, Yoshihiro Osakabe, H. Akima, 2017 .

C and Si delta doping in Ge by CH3SiH3 using reduced pressure chemical vapor deposition

B. Tillack, Yuji Yamamoto, A. Mai, 2016 .

Operation characteristics on short pulse below 100 ps based on transverse mode control with free carrier effect in an oxide-confined VCSEL

K. Harasaka, N. Jikutani, Naofumi Ueno, 2022, 2022 28th International Semiconductor Laser Conference (ISLC).

Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating

M. Sakuraba, Yoshihiro Osakabe, H. Akima, 2017 .

Epitaxial growth of Si1 − xGex alloys and Ge on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition without substrate heating

M. Sakuraba, J. Murota, S. Sato, 2014 .