A. A. Baski

发表

Carrier relaxation and stimulated emission in ZnO nanorods grown by catalyst-assisted vapor transport on various substrates

Hadis Morkoç, Ümit Özgür, V. Avrutin, 2007, SPIE OPTO.

Investigation of charge trapping at the oxide/semiconductor interface for MBE-grown GaN films

Hadis Morkoç, J. Xie, M. A. Reshchikov, 2008, SPIE OPTO.

AFM and CAFM studies of ELO GaN films

Hadis Morkoç, Xianfeng Ni, J. C. Moore, 2007, SPIE OPTO.

Effect of ambient on electrical and optical properties of GaN

Hadis Morkoç, M. A. Reshchikov, A. A. Baski, 2009, OPTO.

Temperature dependent behavior of the SPV for n-type GaN

Hadis Morkoç, M. A. Reshchikov, Huiyong Liu, 2012, OPTO.

Conductive atomic force microscopy study of MBE GaN films

J. Xie, H. Morko, A. A. Baski, 2006, SPIE OPTO.

Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

Hadis Morkoç, Xianfeng Ni, Xiang Li, 2010, OPTO.

Effect of UV exposure on the surface charge behavior for GaN

Hadis Morkoç, Xianfeng Ni, M. A. Reshchikov, 2010, OPTO.

Kelvin probe measurements of p-type GaN

Hadis Morkoç, Xianfeng Ni, M. A. Reshchikov, 2011, OPTO.

Internal quantum efficiency of m-plane InGaN on Si and GaN

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2010, OPTO.

Two-step epitaxial lateral overgrowth of a-plane GaN by MOCVD

H. Morkoç, Ü. Özgür, A. A. Baski, 2007, SPIE OPTO.

Effects of GaN passivation with SiO 2 and SiN x studied by photoluminescence and surface potential electric force microscopy

Hadis Morkoç, M. A. Reshchikov, S. Chevtchenko, 2005 .

Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy

Hadis Morkoç, Paolo Visconti, Feng Yun, 2001 .

Growth of Self-Assembled n-Alkyltrichlorosilane Films on Si(100) Investigated by Atomic Force Microscopy

Lifeng Chi, Harald Fuchs, A. A. Baski, 1995 .

Surface charging and current collapse in an AlGaN∕GaN heterostructure field effect transistor

Hadis Morkoç, A. A. Baski, Seydi Dogan, 2005 .

The structure of silicon surfaces from (001) to (111)

A. A. Baski, Lloyd J. Whitman, Steven C. Erwin, 1997 .

Surface photovoltage in undoped n-type GaN

A. A. Baski, M. Foussekis, Michael A. Reshchikov, 2010 .

Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2009 .

Study of leakage defects on GaN films by conductive atomic force microscopy

Hadis Morkoç, J. C. Moore, A. A. Baski, 2007 .

Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy

Hadis Morkoç, Xianfeng Ni, Q. Fan, 2006 .

Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy

Hadis Morkoç, A. A. Baski, Jinqiao Xie, 2004 .

Photoadsorption and photodesorption for GaN

A. A. Baski, M. Foussekis, Michael A. Reshchikov, 2009 .

Role of the surface in the electrical and optical properties of GaN

Hadis Morkoç, M. A. Reshchikov, A. A. Baski, 2009 .

Transient photovoltage in GaN

Hadis Morkoç, M. A. Reshchikov, A. A. Baski, 2005 .

Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

Hadis Morkoç, Feng Yun, A. A. Baski, 2002 .

The structure of Si(112):Ga-(N×1) reconstructions

A. A. Baski, Lloyd J. Whitman, Steven C. Erwin, 1999 .

Where is the V=0 equipotential?

Albert A. Bartlett, A. A. Baski, 1986 .

Defect reduction in (112¯0) a-plane GaN by two- stage epitaxial lateral overgrowth

Necmi Biyikli, Hadis Morkoç, Xianfeng Ni, 2006 .

Study of SiNx and SiO2 passivation of GaN surfaces

Hadis Morkoç, Xianfeng Ni, M. A. Reshchikov, 2007 .