T. Ohmi

Improvement of formability in deep drawing of ultra-high strength steel sheets by coating of die

Yohei Abe, Ken-ichiro Mori, T. Ohmi, 2014 .

Large-electromigration-resistance copper interconnect technology for sub-half-micron ULSI's

T. Shibata, T. Takewaki, T. Nitta, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Threshold voltage adjustment in SOI MOSFETs by employing tantalum for gate material

T. Ohmi, H. Shimada, T. Ushiki, 1995, Proceedings of International Electron Devices Meeting.

Excellent electro/stress-migration-resistance giant-grain copper interconnect technology for high-performance power devices

T. Shibata, T. Takewaki, H. Yamada, 1995, Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.

Evaluation of electromigration and stressmigration reliabilities of copper interconnects by a simple pulsed-current stressing technique

T. Shibata, T. Takewaki, H. Yamada, 1993, Proceedings of IEEE International Electron Devices Meeting.

In situ-doped epitaxial silicon film growth at 250 degrees C by an ultra-clean low-energy bias sputtering

Tadashi Shibata, Tadahiro Ohmi, K. Hashimoto, 1989, International Technical Digest on Electron Devices Meeting.