Jean-Louis P. Stehle

发表

Single-shot excimer laser annealing of PECVD amorphous silicon

Y. Suzuki, Pierre Boher, Dorian Zahorski, 1996, Other Conferences.

High-accuracy characterization of antireflective coatings and photoresists by spectroscopic ellipsometry: a new tool for 300-mm-wafer technology

Pierre Boher, Jean-Louis P. Stehle, Christophe Defranoux, 1999, Other Conferences.

New purged UV spectroscopic ellipsometer to characterize thin films and multilayers at 157 nm

Pierre Boher, Jean-Louis P. Stehle, Jean-Philippe Piel, 2000, SPIE Optics + Photonics.

Phase-shifting interference microscope for the characterization of metallic interconnections of flat panel displays

Pierre Boher, Jean-Louis P. Stehle, Albert C. Boccara, 2001, Optics + Photonics.

Real-time spectroscopic reflectometer for end-point detection on multichamber deposition processes

Pierre Boher, Jean-Louis P. Stehle, Sebastien Noygues, 1998, Advanced Lithography.

Combined metrology including VUV spectroscopic ellipsometry and grazing x-ray reflectance for precise characterization of thin films and multilayers at 157 nm

Pierre Boher, Jean-Louis P. Stehle, Jean-Philippe Piel, 2001, SPIE Advanced Lithography.

Characterization of laser-annealed polysilicon by spectroscopic ellipsometry and comparison to other techniques

Y. Suzuki, Pierre Boher, Jean-Louis P. Stehle, 1996, Other Conferences.

Automated spectroscopic ellipsometry for characterization of complex multilayers for 550x650x0.7-mm LCD production control

Dorian Zahorski, Jean-Louis P. Stehle, Akira Iwasaki, 1996, Other Conferences.

Feasibility and applicability of integrated metrology using spectroscopic ellipsometry in a cluster tool

Pierre Boher, Jean-Louis P. Stehle, Christopher Pickering, 2000, SPIE Advanced Lithography.

IR spectroscopic ellipsometry for industrial characterization of semiconductors

Pierre Boher, Jean-Louis P. Stehle, Christopher Pickering, 2001, SPIE Optics + Photonics.

Variable angle spectroscopic ellipsometry for deep UV characterization of dielectric coatings

Norbert Kaiser, Jean-Louis P. Stehle, Alexander Zuber, 1994, Other Conferences.

Characterization of resists and antireflective coatings by spectroscopic ellipsometry in the UV and deep-UV range

Louis Hennet, Pierre Boher, Jean-Louis P. Stehle, 1996, Advanced Lithography.

New method for determination of the photoresist Dill parameters using spectroscopic ellipsometry

Pierre Boher, Jean-Louis P. Stehle, Christophe Defranoux, 1999, Advanced Lithography.

New process for manufacturing thin SiGe and SiGeC epitaxial films on silicon by ion implantation and excimer laser annealing

Pierre Boher, Jean-Louis P. Stehle, Jean-Philippe Piel, 1998, Advanced Lithography.

Feasibility and applicability of integrated metrology using spectroscopic ellipsometry in a cluster tool

Pierre Boher, Jean-Louis P. Stehle, Christopher Pickering, 2001, SPIE Optics + Photonics.

Broadband UV small-spot spectroscopic ellipsometer

Xing Chen, Jean-Louis P. Stehle, Dorian Zahorski, 1995, Advanced Lithography.

Spectroscopic ellipsometry and photometry applied to color filter characterization

Jean-Louis P. Stehle, Christophe Defranoux, Jean-Philippe Piel, 1996, Other Conferences.

Precise measurement of ARC optical indices in the deep-UV range by variable-angle spectroscopic ellipsometry

Louis Hennet, Pierre Boher, Jean-Louis P. Stehle, 1997, Advanced Lithography.

New versatile system for characterization of antireflective coatings using combined spectroscopic ellipsometry and grazing x-ray reflectance

Pierre Boher, Jean-Louis P. Stehle, Patrick Evrard, 1999, Other Conferences.

New instrument to characterize materials and optics for 157-nm lithography

Pierre Boher, Jean-Louis P. Stehle, Jean-Philippe Piel, 2001, Microelectronic and MEMS Technologies.

Processing of amorphous silicon flat panel displays with large-area excimer lasers

Bruno Godard, Jean-Louis P. Stehle, Marc Stehle, 1997, Photonics West.

Combined metrology including VUV spectroscopic ellipsometer and grazing x-ray reflectance for precise characterization of thin films and multilayers at 157 nm

Pierre Boher, Jean-Louis P. Stehle, Jean-Philippe Piel, 2001, SPIE Optics + Photonics.

Thickness and index measurements of 8-um liquid crystal gap between plates by spectroscopic ellipsometry

Jean-Louis P. Stehle, Christophe Defranoux, 1996, Other Conferences.

Characterization of ultrathin gate dielectrics using combined grazing x-ray reflectance and spectroscopic ellipsometry

Pierre Boher, Jean-Louis P. Stehle, Christophe Defranoux, 2001, Microelectronic and MEMS Technologies.

Precise and accurate characterization of DUV and V-UV phase shifting mask materials by combined V-UV spectroscopic ellipsometry and x-ray reflectometry

Pierre Boher, Jean-Louis P. Stehle, Christophe Defranoux, 2002, Photomask Technology.

SOPRA SE3000: a new tool for high-accuracy characterization of multilayer structures on very small spot size

Pierre Boher, Jean-Louis P. Stehle, Jean Pierre Rey, 1998, Advanced Lithography.

New purged UV spectroscopic ellipsometer to characterize thin films and multilayers at 157 nm

Pierre Boher, Jean-Louis P. Stehle, Christophe Defranoux, 2000, Advanced Lithography.

New method for determination of the photoresist Dill parameters using spectroscopic ellipsometry

Pierre Boher, Jean-Louis P. Stehle, Christophe Defranoux, 1999, Other Conferences.

High-accuracy characterization of antireflective coatings and photoresists by spectroscopic ellipsometry: a new tool for 300-mm wafer technology

Pierre Boher, Jean-Louis P. Stehle, Christophe Defranoux, 1999, Advanced Lithography.