Hiroyuki Matsunami

发表

Progressive and Lossless Coding for Still Images Using DCT and Predictive Coding

Shigeo Kato, Madoka Hasegawa, Hiroyuki Matsunami, 2002 .

Traps at the SiC/SiO 2 -Interface

Tsunenobu Kimoto, Hiroshi Yano, Hiroyuki Matsunami, 2000 .

MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation

Tsunenobu Kimoto, Hiroshi Yano, Hiroyuki Matsunami, 2000 .

Step‐Controlled Epitaxial Growth of High‐Quality SiC Layers

Tsunenobu Kimoto, Akira Itoh, Hiroyuki Matsunami, 1997 .

Initial stage for heteroepitaxy of 3C–SiC on the Si(001) surface in dimethylgermane source molecular beam epitaxy

Hiroyuki Matsunami, Tomoaki Hatayama, Takashi Fuyuki, 1997 .

4H-SiC MOSFETs on (03-38) Face

Tsunenobu Kimoto, Hiroshi Yano, Hiroyuki Matsunami, 2002 .

Reduction of doping and trap concentrations in 4H-SiC epitaxial layers grown by chemical vapor deposition

Tsunenobu Kimoto, Koichi Hashimoto, Satoshi Nakazawa, 2001 .

Characteristics of Silicon Inversion Layer Solar Cells

Hiroyuki Matsunami, Hideharu Matsuura, H. Matsunami, 1982 .

Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition

Tsunenobu Kimoto, Hiroyuki Matsunami, Satoshi Tamura, 2001 .

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Tsunenobu Kimoto, Hiroyuki Matsunami, H. Matsunami, 1997 .

Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC

Tsunenobu Kimoto, Hiroyuki Matsunami, Fukuji Inoko, 2003 .

Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N2O Oxidation

Tsunenobu Kimoto, Hiroyuki Matsunami, H. Matsunami, 2005 .

Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}

Tsunenobu Kimoto, Akira Itoh, Hiroyuki Matsunami, 1997 .

Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators

Hiroyuki Matsunami, Masahiro Yoshimoto, Hideharu Matsuura, 1995 .

Terrace growth and polytype development in epitaxial β-SiC films on α-SiC (6H and 15R) substrates

Tsunenobu Kimoto, Woo Sik Yoo, Steven Nutt, 1994 .

Conductivity Control of SiC by In-Situ Doping and Ion Implantation

Takashi Nakajima, Tsunenobu Kimoto, Naohisa Inoue, 1997 .

Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001)

Tsunenobu Kimoto, Hiroyuki Matsunami, H. Matsunami, 2005 .

Performance limiting surface defects in SiC epitaxial p-n junction diodes

Tsunenobu Kimoto, Hiroyuki Matsunami, H. Matsunami, 1999 .

Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)

Tsunenobu Kimoto, Jun Suda, Hiroyuki Matsunami, 2005, IEEE Transactions on Electron Devices.

An Overview of SiC Growth

Hiroyuki Matsunami, H. Matsunami, 2000 .

Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition

Hiroyuki Matsunami, Shigehiro Nishino, Akira Ibaraki, 1980 .

Detailed characterization of deep centers in CdTe: Photoionization and thermal ionization properties

Hiroyuki Matsunami, H. Matsunami, T. Takebe, 1982 .

Preparation and properties of ferroelectric PLZT thin films by rf sputtering

Hiroyuki Matsunami, M. Ishida, H. Matsunami, 1977 .

Single crystal growth of SiC and electronic devices

Akira Itoh, Hiroyuki Matsunami, H. Matsunami, 1997 .

Novel mechanisms in nm-thick gate SiO 2 growth at low temperatures utilizing activated oxygen

T. Futatsuyama, Hiroyuki Matsunami, Takashi Fuyuki, 1999 .

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

Tsunenobu Kimoto, Hiroyuki Matsunami, Adolf Schöner, 1997 .

Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiC

Tsunenobu Kimoto, Hiroyuki Matsunami, H. Matsunami, 2002 .