S. Barton

发表

Understanding DC-bias sputtered thorium oxide thin films useful in EUV optics

David D. Allred, William R. Evans, Sarah C. Barton, 2006, SPIE Optics + Photonics.

N-Type Hg1−xCdxTe: Undoped x = 0.3 LPE material for sprite IR detectors

P. Capper, E. O'Keefe, D. Dutton, 1996 .

Assessment of doped CdxHg1-xTe structures using bevelled sections

P. Capper, M. Hastings, I. Gale, 1993 .

Minority carrier lifetime in doped and undoped epitaxially grown n-type CdxHg1−xTe

P. Capper, D. Dutton, N. Metcalfe, 1995 .

Electron mobility in p-type epitaxially grown CdxHg1-xTe

P. Capper, N. Gordon, N. Metcalfe, 1995 .

Electron mobility in p-type epitaxially grown Hg1-xCdxTe

Neil T. Gordon, P. Capper, N. E. Metcalfe, 1993 .

Transient and steady-state lifetime measurements on epitaxially grown CdxHg1-xTe

P. Capper, A. McAllister, N. Metcalfe, 1993 .

Diode R0A in p-type epitaxially grown undoped CdxHg1-xTe

P. Capper, M. Hastings, N. Metcalfe, 1999 .

Determination of Shockley - Read trap parameters in n- and p-type epitaxial

P. Capper, D. Dutton, N. Metcalfe, 1996 .

Minority carrier diffusion length in undoped p-type epitaxially grown CdxHg1-xTe

P. Capper, M. Hastings, N. Metcalfe, 1999 .

Vacancy Control of LPE and MOVPE Grown CdxHg1-xTe by Annealing Techniques

P. Capper, M. Hastings, P. Mackett, 1995 .