H. Funk

发表

Hybrid Spintronic Materials from Conducting Polymers with Molecular Quantum Bits

H. S. Funk, J. Schulze, S. Ludwigs, 2020, Advanced Functional Materials.

Composition and Magnetic Properties of Thin Films Grown by Interdiffusion of Mn and Sn-Rich, Ge Lattice Matched SixGe1-x-ySny Layers

M. Oehme, J. Schulze, J. van Slageren, 2021, Journal of Magnetism and Magnetic Materials.

Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy

Jörg Schulze, Michael Oehme, Daniel Schwarz, 2021, 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO).

Inverse spin-Hall effect in GeSn

M. Oehme, J. Schulze, F. Ciccacci, 2021 .

Impact of Charge Trapping On Epitaxial p-Ge-on-p-Si and HfO2 Based Al/HfO2/p-Ge-on-p-Si/Al Structures Using Kelvin Probe Force Microscopy and Constant Voltage Stress

J. Schulze, S. Sharma, Robin Khosla, 2021, IEEE Transactions on Nanotechnology.

Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy

M. Oehme, J. Schulze, D. Schwarz, 2020, Journal of Electronic Materials.

Local growth of graphene on Cu and Cu0.88Ni0.12 foil substrates

H. S. Funk, J. Ng, N. Kamimura, 2017, 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO).

Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn

J. Schulze, M. Oehme, J. Schulze, 2020, Journal of physics. Condensed matter : an Institute of Physics journal.

Weak localization and weak antilocalization in doped Ge1-y Sn y layers with up to 8% Sn.

M. Oehme, J. Schulze, J. van Slageren, 2020, Journal of physics. Condensed matter : an Institute of Physics journal.

Tuning of Curie temperature in Mn5Ge3 films

M. Helm, Yujia Zeng, J. Schulze, 2022, Journal of Applied Physics.

High mobility Ge 2DHG based MODFETs for low-temperature applications

M. Oehme, J. Schulze, I. Fischer, 2023, Semiconductor Science and Technology.

Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics

Jörg Schulze, Inga A. Fischer, Michael Oehme, 2021, 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO).

High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications

J. Schulze, Robin Khosla, D. Schwarz, 2021 .

Fabrication of GePb-Alloys by Means of Pulsed Laser Induced Epitaxy

H. S. Funk, S. Chiussi, D. Schwarz, 2019, 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO).

A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage Amplification

S. Sharma, J. Schulze, Robin Khosla, 2022, IEEE Transactions on Electron Devices.

Process Optimizations for Ge-On-Si Depletion Mode Transistors Using Mesa Architecture

S. Sharma, J. Schulze, D. Schwarz, 2022, International Symposium on Semiconductor Manufacturing.

Impact of Charge Trapping and Constant Voltage Stress on Epitaxial p-Ge -on-p- Si and HfO 2 based Al/HfO 2 /p-Ge -on- p-Si/Al structures

J. Schulze, S. Sharma, Robin Khosla, 2021 .

Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies

K. Gonsalves, S. Sharma, J. Schulze, 2023, Journal of Vacuum Science & Technology B.