P. Gall

发表

LST ANALYSIS OF SILICON OXIDE MICRO PRECIPITATES IN SILICON MATERIALS

A. Papon, J. Joly, J. Bonnafé, 1990 .

Inhomogeneity in a semi-insulating indium phosphide ingot

M. Gauneau, P. Favennec, J. Fillard, 1991 .

Spatial investigation of an iron-doped indium phosphide ingot

M. Gauneau, M. Salvi, P. Favennec, 1991 .

Thermal activation of glide in InP single crystals

F. Reynaud, S. Gabillet, R. Coquillé, 1987 .

Microtomography observation of precipitates in semi-insulating GaAs materials

J. Weyher, M. Castagné, J. Bonnafé, 1988 .

Recognition and mapping of microdefects by photoetching, laser-scattering tomography and photoluminescence in SI undoped GaAs after different ingot-annealing treatments

J. Weyher, M. Baumgartner, L. S. Dang, 1992 .

High resolution and sensitivity infrared tomography

Paul C. Montgomery, Michel Castagne, P. Gall, 1990 .

Laser-scanning tomography: a survey of recent investigations in semiconductor materials

M. Castagné, J. Bonnafé, J. Fillard, 1992 .

Scattering and Absorption of Infrared Light on EL2 Clusters in GaAs Semi-Insulating Materials

M. Castagné, J. Bonnafé, J. Fillard, 1986 .

LST-detected microprecipitates and their role in the performance of GaAs integrated circuits

M. Castagné, D. Achvar, J. Fillard, 1992 .

Laser scanning tomography: direct evidence of precipitate-free zone at surface of silicon wafers

Michel Castagne, P. Gall, Jacques Bonnafe, 1989 .

Observation of cellular structures of defects in semi-insulating InP-Fe

A. Baroudi, P. Favennec, J. Bonnafé, 1987 .

Study of decoration microdefects in lec-grown Si-doped GaAs crystals by selective photoetching and laser scattering tomography

J. Weyher, L. Zanotti, G. Frigerio, 1990 .

Short range association of EL2 with dislocations in GaAs-In materials

A. Baroudi, J. Bonnafé, J. Fillard, 1988 .

A morpho-statistical evaluation of the defect distribution

M. Castagné, J. Fillard, F. Zhang, 1988 .

Infra-Red Microscopy Of Electronic Substrates

Michel Castagne, Jean-Pierre Fillard, Paul C. Montgomery, 1989, Other Conferences.

EL2° Distribution in the Vicinity of Dislocations in GaAs-In Materials

M. Castagné, J. Fillard, M. Baroudi, 1988 .

Influence of processing parameters on the scattering properties of fluorozirconate glasses prepared by the gas film levitation technique

P. Baniel, J. Granier, P. Gall, 1996 .

The best transparency achieved to date in any fluoride glass waveguide

P. Baniel, J. Granier, P. Gall, 2017 .

Qualification by optical means of CdTe substrates

R. Triboulet, A. Durand, J. Fillard, 1992 .