G. Cai

发表

Low-temperature (80 - C) annealing characteristics of LiF:Mg, Cu, P

C. Furetta, A. Tzima, G. Kitis, 1996 .

Dose Response of the Individual Peak for LiF:Mg,Ti,(TLD-100) and LiF:Mg,Cu,P (GR-200A) TL Materials at the Photon Energies of 30, 104, 1250 keV

J. Gasiot, J. Fesquet, R. Delard, 1996 .

The influence of irradiation temperature on the TL response of LiF:Mg,Cu,P

S. Charalambous, G. Kitis, G. Cai, 1993 .

Radiation-induced damage and its recovery to thermoluminescence sensitivity of LiF:Mg, Cu, P crystal

F. Wu, G. Cai, J. Zuo, 1994 .

Radiation damage and recovery of LiF:Mg, Ti-TLD at the dose of 106 Gy γ-rays

Shoushan Wang, G. Cai, Jian Zhang, 1990 .

LiF:Mg, Cu, P TL detectors with adjustable energy responses

S. T. Wang, G. Cai, 1991 .

Thermal Neutron and Gamma Responses of 6LiF:Mg,Cu,P and 7LiF:Mg,Cu,P TL Films

Fengchang Wu, G. Cai, S. Wang, 1991 .

The influence of the grain size of LiF:Mg,Cu,P thermoluminescent material on photon energy response and dose response

G. Cai, 1995 .

Preparation and Characteristics of LiF:Mg,Cu,P Thermoluminescent Material

J. Zhu, G. Cai, S. Wang, 1993 .

Beta Energy Dependence of LiF:Mg,Cu,P Thermoluminescent Films on Thickness of Sensitive Layer

Fengchang Wu, J. Li, G. Cai, 1992 .

Thermoluminescent Response of 6LiF (Mg,Cu,P) and 7LiF (Mg,Cu,P) TL Chips in Neutron and Gamma Ray Mixed Radiation Fields

G. Cai, S. Wang, K. Zhou, 1990 .

An Improved LiF:Mg,Cu,P Chip with a Low Residual Signal

G. Cai, K. Tang, H. Zhu, 1999 .

Thermoluminescence of LiF:Mg,Cu,P (GR-200A) TLD After Annealing Between 200 and 400 oC

L. Dusseau, J. Gasiot, M. Martini, 1996 .

Low temperature studies in LiF:Mg,Cu,P.

J. Barkyoumb, V. Mathur, P. Bandyopadhyay, 2002, Radiation protection dosimetry.