T. Oomori

Development of a hybrid margin angle controller for HVDC continuous operation

H. Konishi, Masakazu Sato, Masashi Nishimura, 1996 .

Development of SF$_{6}$-Free 72.5 kV GIS

T. Oomori, F. Endo, T. Rokunohe, 2007, IEEE Transactions on Power Delivery.

21.5-dBm power-handling 5-GHz transmit/receive CMOS switch realized by voltage division effect of stacked transistor configuration with depletion-layer-extended transistors (DETs)

N. Suematsu, E. Taniguchi, T. Oomori, 2004, IEEE Journal of Solid-State Circuits.

A 0.8-dB insertion-loss, 17.4-dBm power-handling, 5-GHz transmit/receive switch with DETs in a 0.18-μm CMOS process

N. Suematsu, E. Taniguchi, T. Oomori, 2003, IEEE Electron Device Letters.

Giga-bit scale DRAM cell with new simple Ru/(Ba,Sr)TiO/sub 3//Ru stacked capacitors using X-ray lithography

Masahiro Nunoshita, Shunichi Uzawa, Masafumi Kimata, 1995, Proceedings of International Electron Devices Meeting.

Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial $\hbox{SiO}_{2}$ Layer Between $\hbox{Al}_{2}\hbox{O}_{3}$ and SiC

T. Oomori, E. Tokumitsu, S. Hino, 2008, IEEE Transactions on Electron Devices.

Successful Development of 1.2 kV 4H-SiC MOSFETs with the Very Low On-Resistance of 5 mΩcm2

T. Oomori, Y. Nakao, Y. Tarui, 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.

Low on-resistance 1.2 kV 4H-SiC MOSFETs integrated with current sensor

T. Oomori, Y. Nakao, A. Furukawa, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.