Al F. Tasch

发表

An evaluation of energy transport models for silicon device simulation

T. J. Bordelon, X.-L. Wang, Christine M. Maziar, 1991 .

Experimental studies of growth kinetics of silicon by remote plasma-enhanced chemical vapor deposition at low temperatures

Sanjay K. Banerjee, L. Breaux, Al F. Tasch, 1990, Other Conferences.

Accounting for bandstructure effects in the hydrodynamic model: A first-order approach for silicon device simulation

T. J. Bordelon, X.-L. Wang, Christine M. Maziar, 1992 .

CHANNELING CONTROL FOR LARGE TILT ANGLE IMPLANTATION IN (OO1) SI

Changhae Park, Kevin M. Klein, Robert B. Simonton, 1992 .

Degradation of thin Si02 sidewall spacers during selective epitaxial growth for the fabrication of raised source/drain MOSFETs

Dim-Lee Kwong, Al F. Tasch, Byeong Y. Kim, 1995, Advanced Lithography.

Monte Carlo simulation of arsenic ion implantation in (100) single-crystal silicon

S. J. Morris, S. Tian, Al F. Tasch, 1996 .

The impact of crystal cut error on the measured impurity profiles resulting from ion implantation

B. Obradovic, Al F. Tasch, Ying-Chen Chen, 2000 .

Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

Joe C. Campbell, Al F. Tasch, T. Hsu, 1992 .

A detailed physical model for ion implant induced damage in silicon

S. J. Morris, S. Tian, Charles M. Snell, 1998 .

Homoepitaxial films grown on Si (100) at 150 °C by remote plasma‐enhanced chemical vapor deposition

L. Breaux, Al F. Tasch, B. Anthony, 1989 .