Eunryeong Lee

A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques

Dongkyun Kim, Sangil Park, Jinkook Kim, 2015, IEEE Journal of Solid-State Circuits.

A 1.1V 2y-nm 4.35Gb/s/pin 8Gb LPDDR4 mobile device with bandwidth improvement techniques

Dongkyun Kim, Sangil Park, Youngbo Shim, 2014, Proceedings of the IEEE 2014 Custom Integrated Circuits Conference.

23.3 A 4.8Gb/s/pin 2Gb LPDDR4 SDRAM with sub-100µA self-refresh current for IoT applications

Kyung-Tae Kim, Jun Hyun Chun, Jae-Beom Park, 2017, 2017 IEEE International Solid-State Circuits Conference (ISSCC).

A 16Gb 1.2V 3.2Gb/s/pin DDR4 SDRAM with improved power distribution and repair strategy

Sungho Kim, Jinkook Kim, Minjeong Kim, 2018, 2018 IEEE International Solid - State Circuits Conference - (ISSCC).