Joohwan Cho

A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques

Dongkyun Kim, Sangil Park, Jinkook Kim, 2015, IEEE Journal of Solid-State Circuits.

A 1.1V 2y-nm 4.35Gb/s/pin 8Gb LPDDR4 mobile device with bandwidth improvement techniques

Dongkyun Kim, Sangil Park, Youngbo Shim, 2014, Proceedings of the IEEE 2014 Custom Integrated Circuits Conference.

A floating tap termination scheme with inverted DBI AC and floating tap forcing technique for high-speed low-power signaling

Jong-Hoon Oh, Dong-Wook Jang, Keunsoo Song, 2017, 2017 Symposium on VLSI Circuits.

A 16Gb/s/pin 8Gb GDDR6 DRAM with bandwidth extension techniques for high-speed applications

Jinkook Kim, Boram Kim, Seung-Hun Lee, 2018, 2018 IEEE International Solid - State Circuits Conference - (ISSCC).